Density Functional Calculation for BP/GaN Heterostructures

Abstract:

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Recently, it has become indispensable to use semiconducting nanostructures in the production and development of electronic devices. In this study, the bulk and nanowire heterostructures of the BP / GaN system have been investigated for the structures pure and Te atom doped. In calculations, the plane wave self-consistent field program based on density functional theory was used. The average potentials of the aforementioned systems have been calculated and the interface effect has investigated.

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Periodical:

Edited by:

Prof. Kazuo Umemura

Pages:

45-49

Citation:

H. Özkişi and S. Dalgıç, "Density Functional Calculation for BP/GaN Heterostructures", Materials Science Forum, Vol. 916, pp. 45-49, 2018

Online since:

March 2018

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$38.00

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