Density Functional Calculation for BP/GaN Heterostructures

Harun Özkişi; Seyfettin Dalgıç

doi:10.4028/www.scientific.net/MSF.916.45

Paper Titles

Comparison of Morphology and Mechanical Properties of Polyoxymethylene/Cellulose and Poly(Lactic Acid)/Cellulose Composites
p.19

Effect of Concentration on the Ionic Interaction between Polystyrene Sulfonate and Cationic Surfactant in Aqueous Solution
p.24

Microwave Absorbing Property of Thin Coating in the Broadband Low-Frequency Range
p.33

Effect of Hubbard U on the Electronic Properties of Monolayer FeSe/SrTiO₃(001) Superconductor
p.38

Density Functional Calculation for BP/GaN Heterostructures
p.45

Preparation of Cuprous Oxide/Cobaltous Oxide Nanostructured Composite with the Aid of Polyethylene Glycol and Ultrasonic Sound
p.50

Its Optical Property and Characterization of Silver Antimony Sulfide Nanostructured Clusters Synthesized Using a Facile Wet Chemical Route
p.55

Thermally Induced Morphological and Structural Transitions of Zinc Blende CdSe Hollow Nanoparticles Studied by Molecular Dynamics Simulation
p.60

Electronic Properties of Cr and Mn Doped BN Nanowires
p.69

HomeMaterials Science ForumMaterials Science Forum Vol. 916Density Functional Calculation for BP/GaN...

Density Functional Calculation for BP/GaN Heterostructures

Abstract:

Recently, it has become indispensable to use semiconducting nanostructures in the production and development of electronic devices. In this study, the bulk and nanowire heterostructures of the BP / GaN system have been investigated for the structures pure and Te atom doped. In calculations, the plane wave self-consistent field program based on density functional theory was used. The average potentials of the aforementioned systems have been calculated and the interface effect has investigated.