Density Functional Calculation for BP/GaN Heterostructures
Recently, it has become indispensable to use semiconducting nanostructures in the production and development of electronic devices. In this study, the bulk and nanowire heterostructures of the BP / GaN system have been investigated for the structures pure and Te atom doped. In calculations, the plane wave self-consistent field program based on density functional theory was used. The average potentials of the aforementioned systems have been calculated and the interface effect has investigated.
Prof. Kazuo Umemura
H. Özkişi and S. Dalgıç, "Density Functional Calculation for BP/GaN Heterostructures", Materials Science Forum, Vol. 916, pp. 45-49, 2018