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HomeMaterials Science ForumMaterials Science Forum Vol. 921Dielectric Properties of A, B-Site Mn-Doped...

Dielectric Properties of A, B-Site Mn-Doped LaTiO_3+δ

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Abstract:

A-site Mn-doped La_1-xMn_xTiO_3+δ and B-site doped LaMn_xTi_1-xO_3+δ (x = 0.1, 0.2) composites were synthesized by conventional solid-state reaction method. The low-frequency complex dielectric properties of the composites were investigated as functions of temperature (77 K ≤ T ≤ 360 K) and frequency (100 Hz ≤ f ≤ 1 MHz), respectively. The dielectric constants of A-site doped samples are higher than that of B-site doped samples. The loss tangents of the low doped samples are much less than that of the high doped samples. The A-site doped composites exhibit intrinsic dielectric response with a dielectric constant of ~40 in the temperature below 250 K. Interestingly, the dielectric constants of B-site doped composites always increased in the temperature range from 77 to 360 K. And it is clearly observed that extraordinarily low dielectric loss tangents appear in LaMn_0.1Ti_0.9O_3+δ, which are much lower than that of LaMn_0.2Ti_0.8O_3+δ. These changes indicate that the doped content can affect the intrinsic dielectric characteristics significantly.

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Materials for Modern Technologies IV

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Periodical:

Materials Science Forum (Volume 921)

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78-84

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.921.78

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Online since:

May 2018

Authors:

Yan Chen, Qi Qi Yan*, Yi Min Cui

Keywords:

A-Site Doped, B-Site Doped, Complex Impedance, Dielectric Properties, Mn Doped LaTiO_3+δ

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© 2018 Trans Tech Publications Ltd. All Rights Reserved

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