Study on Movement of Particles in RF Plasma Deposition Process

Yuan Cheng Sun; Xue Fu Song; Xiu Rong Du; Xiao Qiang Zhang; Ning Hua

doi:10.4028/www.scientific.net/MSF.944.1187

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HomeMaterials Science ForumMaterials Science Forum Vol. 944Study on Movement of Particles in RF Plasma...

Study on Movement of Particles in RF Plasma Deposition Process

Abstract:

The motion behavior of nanoparticles in rf plasma deposition process is important to deposition quality and efficiency. Temperature and flow field were calculated by CFD method and motion of particles with different diameter (100 μm, 10 μm, 0.1 μm and 0.01 μm) in rf plasma deposition process were studied. The result shows that the carrier gas flow may influence the temperature of substrate surface and influents the velocity field and movement of particles significantly. Particles with the same diameter can easily go throw the plasma and deposit on the substrate by improving the flow of carrier gas. Increasing of feeding pipe can strengthen movement of particles but decrease the temperature of substrate at the same time. The larger diameter of particles, the easier of it to go throw the plasma and deposit on the substrate because of its mobility following the airflow.

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Periodical:

Materials Science Forum (Volume 944)

Pages:

1187-1191

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.944.1187

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Online since:

January 2019

Authors:

Yuan Cheng Sun*, Xue Fu Song, Xiu Rong Du, Xiao Qiang Zhang, Ning Hua

Keywords:

Chemical Vapor Deposition, Particles, Plasma

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