Strong Hole Self-Doping in LaMnO3 Thin Film on a-SiO2 Substrate Produced by Metal Organic Decomposition Method

Hiromi Kobori; Tohru Kitamura; Toshifumi Taniguchi; Tetsuo Shimizu

doi:10.4028/www.scientific.net/MSF.962.17

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HomeMaterials Science ForumMaterials Science Forum Vol. 962Strong Hole Self-Doping in LaMnO3 Thin Film on...

Strong Hole Self-Doping in LaMnO₃ Thin Film on a-SiO₂ Substrate Produced by Metal Organic Decomposition Method

Abstract:

We have studied the strong hole self-doping into LaMnO₃ (LMO) thin films produced by metal organic decomposition (MOD) method. With different heat treatment conditions, LMO thin films have been prepared by the MOD method in the 100 % O₂ gas atmosphere. We consider that the excess of O^2- ions in LMO thin films induces the strong hole self-doping into LMO ones. The quantity of excess O^2- ions in LMO is sensitive to the heat treatment conditions of the LMO production, especially the temperature, time and atmosphere gas. Although LMO single crystal is an antiferromagnetic insulator, LMO thin films we have produced in the 100 % O₂ gas atmosphere by use of the MOD method shows the properties of ferromagnetic metal.

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Materials Science Forum (Volume 962)

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17-21

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.962.17

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Online since:

July 2019

Authors:

Hiromi Kobori*, Tohru Kitamura, Toshifumi Taniguchi, Tetsuo Shimizu

Keywords:

Ferromagnetic Metal, Hole Self-Doping, LaMnO₃, Metal Organic Decomposition, Thin Film

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