Increasing Laser-Doping Depth of Al in 4H-SiC by Using Expanded-Pulse Excimer Laser

Akihiro Ikeda; Takahi Shimokawa; Hiroshi Ikenoue; Tanemasa Asano

doi:10.4028/www.scientific.net/MSF.963.412

Paper Titles

Comparison of Ranges for Al Implantations into 4H-SiC (0001) Using Channeled Ions and an Ion Energy in the Bethe-Bloch Region
p.394

Thermal Annealing of High Dose P Implantation in 4H-SiC
p.399

High-Concentration, Low-Temperature, and Low-Cost Excimer Laser Doping for 4H-SiC Power Device Fabrication
p.403

Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers
p.407

Increasing Laser-Doping Depth of Al in 4H-SiC by Using Expanded-Pulse Excimer Laser
p.412

Activation Energy for the Post Implantation Annealing of 10¹⁹ cm^-3 and 10²⁰cm^-3 Ion Implanted Al in 4H SiC
p.416

1300°C Annealing of 1×10²⁰ Al⁺ Ion Implanted 3C-SiC
p.420

Raman Spectroscopy Characterization of Ion Implanted 4H-SiC
p.424

Surface Characterization of Ion Implanted 4H-SiC Epitaxial Layers with Ion Energy and Concentration Variations
p.429

HomeMaterials Science ForumMaterials Science Forum Vol. 963Increasing Laser-Doping Depth of Al in 4H-SiC by...

Increasing Laser-Doping Depth of Al in 4H-SiC by Using Expanded-Pulse Excimer Laser

Abstract:

Al doping into 4H-SiC performed by irradiating pulse-width-expanded excimer laser to an Al film deposited on the 4H-SiC surface is investigated. An optical pulse stretcher was constructed to produce the laser pulse whose peak intensity was reduced as half as that of the original pulse and pulse width was expanded from 55 ns to 100 ns. The irradiation of the expanded pulses is found to reduce the ablation of the materials from the surface and enable irradiation of multiple shots. As the result, doping depth of Al is significantly increased. The multiple shots of the expanded pulses is also fund to decrease the sensitivity to spatial non-uniformity of laser intensity and increase the uniformity of doped region.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

412-415

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.412

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Online since:

July 2019

Authors:

Akihiro Ikeda*, Takahi Shimokawa, Hiroshi Ikenoue, Tanemasa Asano

Keywords:

Aluminum Doping, Excimer Laser, Laser Doping, Optical Pulse Stretcher, p-Type Silicon Carbide, Silicon Carbide

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