Comparison of Ranges for Al Implantations into 4H-SiC (0001) Using Channeled Ions and an Ion Energy in the Bethe-Bloch Region

Kazuhiro Mochizuki; Ryoji Kosugi; Yoshiyuki Yonezawa; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.963.394

Paper Titles

Recent Advances in the Doping of 4H-SiC by Channeled Ion Implantation
p.375

Channeled Implantations of p-Type Dopants into 4H-SiC at Different Temperatures
p.382

Channeling in 4H-SiC from an Application Point of View
p.386

Fabrication and Characterization of 3.3-kV SiC DMOSFET with Self-Aligned Channels Formed by Tilted Ion Implantation
p.390

Comparison of Ranges for Al Implantations into 4H-SiC (0001) Using Channeled Ions and an Ion Energy in the Bethe-Bloch Region
p.394

Thermal Annealing of High Dose P Implantation in 4H-SiC
p.399

High-Concentration, Low-Temperature, and Low-Cost Excimer Laser Doping for 4H-SiC Power Device Fabrication
p.403

Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers
p.407

Increasing Laser-Doping Depth of Al in 4H-SiC by Using Expanded-Pulse Excimer Laser
p.412

HomeMaterials Science ForumMaterials Science Forum Vol. 963Comparison of Ranges for Al Implantations into...

Comparison of Ranges for Al Implantations into 4H-SiC (0001) Using Channeled Ions and an Ion Energy in the Bethe-Bloch Region

Abstract:

Ranges for Al implantations into 4H-SiC (0001) were compared between channeled-ion implantation (without using a MeV implanter) and non-channeled ion implantation using an ion energy E₀ in the Bethe–Bloch region (IIBB). Since the latter (i.e., projected range of 7.5 μm at E₀ = 26 MeV) was larger than the former (i.e., maximum channeled range of 3.4 μm at E₀ = 900 keV), IIBB was concluded to be suitable to minimize the repeat count of epitaxial growth/ion implantation steps used in the fabrication of 4H-SiC superjunction power devices.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

394-398

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.394

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Online since:

July 2019

Authors:

Kazuhiro Mochizuki*, Ryoji Kosugi, Yoshiyuki Yonezawa, Hajime Okumura

Keywords:

Al, Bethe–Bloch Region, Channeled Ion, Implantation, Ion Energy, Range, Superjunction (SJ)

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