Channeled Implantations of p-Type Dopants into 4H-SiC at Different Temperatures

Margareta K. Linnarsson; Anders Hallén; Lasse Vines; Bengt Gunnar Svensson

doi:10.4028/www.scientific.net/MSF.963.382

Paper Titles

Nano and Micro-Scale Simulations of Si/4H-SiC and Si/3C-SiC NN-Heterojunction Diodes
p.357

Characterization of β-Silicon Carbide and Potential Use as Irradiation Temperature Monitor
p.362

Terahertz Emission from SiC Natural Superlattices in Strong Electrical Field
p.367

Recent Advances in the Doping of 4H-SiC by Channeled Ion Implantation
p.375

Channeled Implantations of p-Type Dopants into 4H-SiC at Different Temperatures
p.382

Channeling in 4H-SiC from an Application Point of View
p.386

Fabrication and Characterization of 3.3-kV SiC DMOSFET with Self-Aligned Channels Formed by Tilted Ion Implantation
p.390

Comparison of Ranges for Al Implantations into 4H-SiC (0001) Using Channeled Ions and an Ion Energy in the Bethe-Bloch Region
p.394

Thermal Annealing of High Dose P Implantation in 4H-SiC
p.399

HomeMaterials Science ForumMaterials Science Forum Vol. 963Channeled Implantations of p-Type Dopants into...

Channeled Implantations of p-Type Dopants into 4H-SiC at Different Temperatures

Abstract:

Channeling of B and Al ions in 4H-SiC(0001), has been investigated by secondary ion mass spectrometry (SIMS). Ion implantations have been performed between room temperature (RT) and 600 °C at various fluences. Before implantation, the major crystal axes were determined and the sample was aligned using the blocking pattern of backscattered protons. As expected, the depth distribution of the implanted ions along a crystal direction penetrates much deeper compared to non-channeling directions. At elevated temperatures, the channeling depth for 100 keV Al-ions is decreased due to lattice vibrations. For 50 keV B-ions, the temperature effect is minor, indicating a smaller interaction between target atoms and B. Simulations has been performed using SIIMPL, a Monte Carlo simulation code based on the binary collision approximation, to predict experimental data and get a deeper insight in the channeling process.