Fabrication and Characterization of 3.3-kV SiC DMOSFET with Self-Aligned Channels Formed by Tilted Ion Implantation

Takahiro Morikawa; Shintaroh Sato; Akio Shima

doi:10.4028/www.scientific.net/MSF.963.390

Paper Titles

Terahertz Emission from SiC Natural Superlattices in Strong Electrical Field
p.367

Recent Advances in the Doping of 4H-SiC by Channeled Ion Implantation
p.375

Channeled Implantations of p-Type Dopants into 4H-SiC at Different Temperatures
p.382

Channeling in 4H-SiC from an Application Point of View
p.386

Fabrication and Characterization of 3.3-kV SiC DMOSFET with Self-Aligned Channels Formed by Tilted Ion Implantation
p.390

Comparison of Ranges for Al Implantations into 4H-SiC (0001) Using Channeled Ions and an Ion Energy in the Bethe-Bloch Region
p.394

Thermal Annealing of High Dose P Implantation in 4H-SiC
p.399

High-Concentration, Low-Temperature, and Low-Cost Excimer Laser Doping for 4H-SiC Power Device Fabrication
p.403

Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers
p.407

HomeMaterials Science ForumMaterials Science Forum Vol. 963Fabrication and Characterization of 3.3-kV SiC...

Fabrication and Characterization of 3.3-kV SiC DMOSFET with Self-Aligned Channels Formed by Tilted Ion Implantation

Abstract:

SiC DMOSFET with self-aligned channels was fabricated and characterized. The process features self-aligned channel formation by utilizing tilted ion implantation. We confirmed that channel areas were successfully formed along both sides of the stripe cell. Electrical measurements revealed that the characteristics of the fabricated DMOSFET chips had sufficiently high blocking voltage and moderate values of threshold voltage and on-state resistance. These experimental results show the proposed process can be an easy option for fabrication of SiC DMOSFET.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

390-393

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.390

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Online since:

July 2019

Authors:

Takahiro Morikawa*, Shintaroh Sato, Akio Shima

Keywords:

Cell Design, DMOSFET, Ion Implantation, Self-Aligned Process, Short Channel, Silicon Carbide

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