High-Concentration, Low-Temperature, and Low-Cost Excimer Laser Doping for 4H-SiC Power Device Fabrication

Kaname Imokawa; Toshifumi Kikuchi; Kento Okamoto; Daisuke Nakamura; Akihiro Ikeda; Tanemasa Asano; Hiroshi Ikenoue

doi:10.4028/www.scientific.net/MSF.963.403

Paper Titles

Channeling in 4H-SiC from an Application Point of View
p.386

Fabrication and Characterization of 3.3-kV SiC DMOSFET with Self-Aligned Channels Formed by Tilted Ion Implantation
p.390

Comparison of Ranges for Al Implantations into 4H-SiC (0001) Using Channeled Ions and an Ion Energy in the Bethe-Bloch Region
p.394

Thermal Annealing of High Dose P Implantation in 4H-SiC
p.399

High-Concentration, Low-Temperature, and Low-Cost Excimer Laser Doping for 4H-SiC Power Device Fabrication
p.403

Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers
p.407

Increasing Laser-Doping Depth of Al in 4H-SiC by Using Expanded-Pulse Excimer Laser
p.412

Activation Energy for the Post Implantation Annealing of 10¹⁹ cm^-3 and 10²⁰cm^-3 Ion Implanted Al in 4H SiC
p.416

1300°C Annealing of 1×10²⁰ Al⁺ Ion Implanted 3C-SiC
p.420

HomeMaterials Science ForumMaterials Science Forum Vol. 963High-Concentration, Low-Temperature, and Low-Cost...

High-Concentration, Low-Temperature, and Low-Cost Excimer Laser Doping for 4H-SiC Power Device Fabrication

Abstract:

We developed a novel KrF excimer laser doping system for 4H-SiC power devices, and demonstrated laser doping of 4H-SiC with Al thin film deposited on the surface. As seen from the results of the Al depth profile, high concentration implantation (~ 10²¹cm^-3at the surface) of Al was achieved by laser ablation of the Al thin film. A high, built-in-potential (~3.5 V) of the pn junction diode was clearly seen in the I-V curve. In addition, the contact resistivity of the deposited Al/Ti electrodes on the surface was 1.9 × 10⁻⁴ Ωcm² by TLM (Transmission Line Model). It was confirmed that a high concentration of Al doping and low contact resistivity were achieved by the KrF excimer laser doping system.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

403-406

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.403

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Online since:

July 2019

Authors:

Kaname Imokawa, Toshifumi Kikuchi, Kento Okamoto, Daisuke Nakamura, Akihiro Ikeda, Tanemasa Asano, Hiroshi Ikenoue*

Keywords:

4H-SiC, Al Thin Film, Excimer Laser Doping, PN Junction Diode

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