Paper Titles
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On the Origin of Charge Compensation in Aluminum-Implanted n-Type 4H-SiC by Analysis of Hall Effect Measurements
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Lateral Straggling of Ion Implantation Distributions in 4H-SiC Investigated by SIMS
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Decoration of Al Implantation Profiles in 4H-SiC by Bevel Grinding and Dry Oxidation
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Determination of Compensation Ratios of Al-Implanted 4H-SiC by TCAD Modelling of TLM Measurements
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Characterization of Ba-Introduced Thin Gate Oxide on 4H-SiC
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Study of the Post-Oxidation-Annealing (POA) Process on Deposited High-Temperature Oxide (HTO) Layers as Gate Dielectric in SiC MOSFET
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Lateral Straggling of Ion Implantation Distributions in 4H-SiC Investigated by SIMS

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Abstract:

Ion implantation is a crucial step in the process of SiC device fabrication. Precise and predictable doping distributions are necessary for reduced cell pitches and integrated circuit development. However, straggling due to ion channeling affects this goal. Even though vertical channeling has been investigated successfully, lateral straggling remains unclear. Therefore, two-dimensional SIMS concentration distributions are used to investigate lateral straggling of Al and P implanted in 4H-SiC. Results, for both Al and P, show that there is a significant influence of the crystal orientation showing that some channels lead to a few micrometers more lateral straggling than others. High implantation doses increase the amount of amorphization, which leads to more dechanneling and, thus, less straggling. Even though elevated implantation temperatures increase lattice vibrations and thus act in favor of dechanneling, the implantation distributions show significant lateral straggling as amorphization is suppressed.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

437-440

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.437

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Online since:

July 2019

Authors:

Johanna Müting*, Viktor Bobal, Alexander Azarov, Bengt Gunnar Svensson, Ulrike Grossner

Keywords:

Ion Implantation, Lateral Straggling, SIMS

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© 2019 Trans Tech Publications Ltd. All Rights Reserved

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