Effects of Co Doping on the Thermoelectric Properties of Cu₃SbSe₄ at Moderate Temperature

Abstract:

Cu₃SbSe₄-based thermoelectric materials are a class of thermoelectric materials with diamond-like structure which exhibit high thermoelectric properties at moderate temperature region and have broad research prospects. In this study, the p-type Co-doped Cu_3-xCo_xSbSe₄ (x=0-0.015) thermoelectric materials were fabricated by melting-annealing-ball milling-hot pressing process to investigate the effects of Co doping on the thermoelectric properties of Cu₃SbSe₄. It is found that the average power factor of Cu_2.995Co_0.005SbSe₄ was increased by 30% compared with the pure sample, indicating that Co doping had a great effect on the electrical properties of Cu₃SbSe₄. The energy gap of ternary p-type semiconductor Cu₃SbSe₄ was around 0.27eV. As the Co content increasing, the lattice distortion enhanced the phonon scattering, which led to the decrease in lattice thermal conductivity. The maximum thermoelectric figure of merit, ZT_max, reached 0.46 at 600K for the Cu_2.995Co_0.005SbSe₄.

• Periodical: Materials Science Forum (Volume 993)
• Pages: 899-905
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.993.899
• Online since: May 2020
• Authors: Lin Bo, Wen Ying Wang, Yong Peng Wang, Lin Wang, Min Zuo*, De Gang Zhao
• Keywords: Cu₃SbSe₄ Thermoelectric Materials, Doping, Thermoelectric Properties

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