Preparation and Characterization of High Mobility Nb-Doped SnO₂ Transparent Conducting Films

Abstract:

Metal organic chemical vapor deposition (MOCVD) was employed for the preparation of niobium (Nb)-doped SnO₂ films on SiO₂ glass substrates. The structure, optical and electrical properties of the Nb-doped SnO₂ films were systemically studied. The X-ray diffraction results indicated that the polycrystalline rutile SnO₂ films were obtained with a preferred SnO₂ [110] growth direction. Among which, the 5.4 at.% Nb-doped SnO₂ film showed the lowest resistivity of 1.0×10^-3 Ω∙cm and the highest Hall mobility of 74 cm²∙V^-1∙s^-1. The average visible light transmittance of the 5.4 at.% Nb-doped SnO₂ sample was more than 79%. The obtained Nb-doped SnO₂ films exhibited low resistivity, high Hall mobility and good transparency, which might have wide applications in electric and photoelectric devices.

• Periodical: Materials Science Forum (Volume 993)
• Pages: 869-875
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.993.869
• Online since: May 2020
• Authors: Lin An He, Cai Na Luan*, Di Wang, Yong Le, Jin Ma
• Keywords: High Mobility, SnO₂, Transparent Conductive Oxide Semiconductor

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