Synthesis and Electrical Resistance Property of Vanadium Oxide Thin Films by DC Magnetron Sputtering

Ladawan Chotirat; Sutham Niyomwas; Sitthisuntorn Supothina; Witthawat Wongpisan; Kirati Waree

doi:10.4028/www.scientific.net/MSF.998.185

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HomeMaterials Science ForumMaterials Science Forum Vol. 998Synthesis and Electrical Resistance Property of...

Synthesis and Electrical Resistance Property of Vanadium Oxide Thin Films by DC Magnetron Sputtering

Abstract:

Thin films of vanadium oxide were synthesized by DC magnetron sputtering on a glass slide. Process parameters including temperature, argon and oxygen ratio (Ar:O₂) and base pressure were investigated. It was found that the control of sputtering base pressure is very important in realizing the pure VO₂(M) thin films. These thin films have grown at low base pressure of 5x10^-6mbar. The results of the valence electron analysis show the outstanding phase of VO₂and a small amount of V₂O₅and V₂O₃phases. The hysteresis loop of electrical resistance property of the VO₂thin films illustrated the quality of film, which is related to metal-insulator transition phase (MIT) at the transition temperature (T_c) of approximately 63°C. The sample was tested for its electrical properties by a four-probe setup with a temperature controller during heating and cooling cycles.

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Material Science and Engineering Technology VIII

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Materials Science Forum (Volume 998)

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185-190

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https://doi.org/10.4028/www.scientific.net/MSF.998.185

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June 2020

Authors:

Ladawan Chotirat, Sutham Niyomwas*, Sitthisuntorn Supothina, Witthawat Wongpisan, Kirati Waree

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Sputtering, Thermochromic, Thin Films, VO₂

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