Engineering Research
Materials Science
Engineering Series
Retrospective Collection
The required fundamental investigations for improving industrial processes are necessarily devoted to all aspects of the reactivity in molten salts. Therefore, most of the relevant disciplines are represented here: electrochemistry, spectroscopy and computer modelling.
This issue is based on proceedings of the 3rd International Conference on Physics and Technology of GaAs and other III-V Semiconductors, Lomnica, CSFR, December 1988. The collected articles present research results in studies of crystal properties and preparation methods of gallium arsenide and the use of gallium arsenide as a semiconductor compound with high electron mobility.
-Metastability in Semiconductor Strained-Layer Structures
-The Morphology of MOCVD-Grown Semiconductor Multilayers
-Electrical Transport Studies of InGaAs/GaAs Strained-Layer Quantum-Well Structures
-Device Structures Based on GaAsP/InGaAs Strained Layer Superlattices and Their Stability
-The Preparation and Infrared Properties of In (AsSb) Strained-Layer Superlattices
-Ion Implantation of III-V Compound Semiconductor Strained-Layer Semiconductors Systems
-II-VI Strained-Layer Semiconductor Superlattices