This issue is based on proceedings of the 3rd International Conference on Physics and Technology of GaAs and other III-V Semiconductors, Lomnica, CSFR, December 1988. The collected articles present research results in studies of crystal properties and preparation methods of gallium arsenide and the use of gallium arsenide as a semiconductor compound with high electron mobility.

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eBook:

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ToC:

Table of contents

Authors:

P. Kordos

DOI:

https://doi.org/10.4028/www.scientific.net/RC.18

THEMA:

TGM

BISAC:

TEC021000

Keywords:

Crystal Properties, Diffusion, Epitaxial Growth, Gallium Arsenide, Ion Implantation, Semiconductor, Thin Film

Details:

Proceedings of the 3rd International Conference on Physics & Technology of GaAs and other III-V Semiconductors, Lomnica, CSFR, December 1988

Pages:

380

Year:

1989

ISBN-13 (softcover):

9780878495863

ISBN-13 (CD):

9783035729702

ISBN-13 (eBook):

9783035739701

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