Books by Keyword: Gallium Arsenide

Description: The impetuous pace of technological advancement and the increasing demand for sustainable solutions have propelled innovation across diverse fields of materials science and engineering. The research results in this special edition reflect these trends, offering cutting-edge engineering solutions and their application methods.

Description: This special publication presents to readers the latest engineering investigations in the area of materials science including thin films and nanomaterials for microelectronics and surface treatment technologies in machinery. The special edition will be useful to many researchers and engineers whose activities are related to machinery and electronics.

Description:

This edition presents to readers the research results on materials and technologies in the construction sector and analyses the properties of the ceramic anti-corrosion coating, polymer materials and gallium arsenide semiconductor structure for optoelectronic application. The book will be useful to many specialists in materials science and construction sector.

Description: This book is the result of twenty years of experience on the fabrication of active micro-cooling systems, the fabrication of electronic devices (radiation and magnetic sensors, transistors), the fabrication of optical devices (new green LED), and the adaptation of silicon simulation software to diamond. This includes the integration of the current transport models of diamond. The book emphasize the subjects' substrate selection, mechanical and chemical structuring, doping, and metallization. Also included is simulation as a tool to predict the results of the technological steps. Though a state of the art method is far behind in comparison to the silicon and gallium arsenide growth we assume the same state as exists in these technologies, namely that the diamond substrates are commercially available.

Description: The subject area of electronic devices has undergone a rapid expansion in recent years. New developments are continually accurring all over the world. Progress in the field of electronic devices is, however, dependent upon the production and characterization of device grade material. The science and technology of electronic materials has attracted somewhat less attention, as compared with device development.

Description: Journal issue

Description: Part 1. 1. Hydrogen in Elemental Hosts . 2. Transition Metal Impurities in Elemental Hosts . 3. Impurities in Elemental Hosts . 4. Irradiation Defects in Elemental Hosts . 5. Oxygen in GaAs, Si and Ge . 6. Theory . Part 2 . 7. Hydrogen in Compound Semiconductors . 8. Rare Earth Impurities in Silicon and Compound Semiconductors . 9. Transition Metal Impurities in Compound Semiconductors . 10. Donors in Compound Semiconductors . 11. EL2 And Anti-Site Related Defects . 12. Other Defects in III-V Semiconductors . 13. Growth Defects . Part 3 . 14. New Techniques . 15. Defects in SiC and Diamond . 16. Defects in II-VI Semiconductors . 17. Hetero-Epitaxy and Strained Layers . 18. Dislocations . 19. Superlattices . 20. Defects at Surfaces and Interfaces and in Low-Dimensional Structures . 21. Processing-Induced Defects . 22. Effects of Defects on Devices .

Description:

This issue is based on proceedings of the 3rd International Conference on Physics and Technology of GaAs and other III-V Semiconductors, Lomnica, CSFR, December 1988. The collected articles present research results in studies of crystal properties and preparation methods of gallium arsenide and the use of gallium arsenide as a semiconductor compound with high electron mobility.