Novel Low-K Dielectric Obtained by Xenon Implantation in SiO₂

Abstract:

We implanted 300keV Xenon in silicon oxide at doses ranging from 1x1016 to 5x1016/cm2. For the first time, we reported the formation and the thermal evolution of bubbles/cavities in SiO2. Characterization by cross-section transmission electron microscopy (XTEM) and Rutherford backscattering spectrometry (RBS) showed that bubbles/cavities remain present even after a 1100°C annealing, while Xe strongly desorbs out at that temperature. Our measurements provides unexpected dielectric constant (k) lower than 1.6. These results make this technique very attractive for low-k applications in Si technology. Keywords: low-k dielectric, rare gas implantation, silicon oxid.

• Periodical: Solid State Phenomena (Volumes 108-109)
• Pages: 291-296
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.108-109.291
• Online since: December 2005
• Authors: H. Assaf, E. Ntsoenzok, M.O. Ruault, O. Kaïtasov
• Keywords: Low-k Dielectric, Rare Gas Implantation, Silicon Oxide (SiO)

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