Paper Titles

Electronic Properties and Structure of a Complex Incorporating a Self-Interstitial and two Oxygen Atoms in Silicon
p.273

Impact of Hydrogenation on Electrical Properties of NiSi₂ Precipitates in Silicon
p.279

On the Electrical Activity of Misfit and Threading Dislocations in p-n Junctions Fabricated in Thin Strain-Relaxed Buffer Layers
p.285

Novel Low-K Dielectric Obtained by Xenon Implantation in SiO₂
p.291

Influence of Metal Contamination in the Measurement of p-Type Cz Silicon Wafer Lifetime and Impact on the Oxide Growth
p.297

Structure Determination of Clusters Formed in Ultra-Low Energy High-Dose Implanted Silicon
p.303

Impact of Hydrogen Implantation on Helium Implantation Induced Defects
p.309

Bulk Radiation Damage Induced in Thin Epitaxial Silicon Detectors by 24 GeV Protons
p.315

Defect Engineering in Ion Beam Synthesis of SiC and SiO₂ in Si
p.321

HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109Influence of Metal Contamination in the...

Influence of Metal Contamination in the Measurement of p-Type Cz Silicon Wafer Lifetime and Impact on the Oxide Growth

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology XI

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

297-302

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.297

Citation:

Cite this paper

Online since:

December 2005

Authors:

Carole Bigot, Adrien Danel, S. Thevenin

Keywords:

Contamination, Lifetime, Metal, Silicon

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2005 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: