Buried Nano - Structured Layers in High Temperature – Pressure Treated Si:He

Andrzej Misiuk; Barbara Surma; Jadwiga Bak-Misiuk; Vito Raineri

doi:10.4028/www.scientific.net/SSP.114.285

Paper Titles

SiC – Zn Nanocomposites Obtained Using the High – Pressure Infiltration Technique
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Downscaling Equal Channel Angular Pressing
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Synthesis of Diamond Particles under Alkaline Hydrothermal Conditions
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Nanotube and Nanorod Synthesis under High Frequency Electric Discharge Assisted Mechanical Milling
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Buried Nano - Structured Layers in High Temperature – Pressure Treated Si:He
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Pressure-Assisted Lateral Nanostructuring of the Epitaxial Silicon Layers with SiGe Quantum Wells
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Fabrication and Physical Properties of SiC-GaAs Nano-Composites
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Nanopowder Diffraction Theory – Line Profile for Polydispersive Powders
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Error Estimation in XRD Crystallite Size Measurements
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Buried Nano - Structured Layers in High Temperature – Pressure Treated Si:He

Abstract:

The effect of treatment at up to 1400 K (HT) under enhanced hydrostatic pressure (HP, up to 1.2 GPa) on helium implanted single crystalline silicon (Si:He, He ion dose up to 6x1017cm-2, energy up to 300 keV) has been investigated by transmission electron microscopy, secondary ion mass spectrometry, photoluminescence and X-Ray methods. The treatment of Si:He at ≤ 920 K - HP results in a formation of buried nano-structured layers containing helium filled cavities/bubbles and numerous extended defects; many less dislocations are created at ≥ 1270 K in Si:He treated under HP. HP affects the recrystallization of amorphous Si, diffusivity of implanted He and of implantation-induced defects and thus promotes the creation of more but smaller He-filled cavities/bubbles as well as other defects near the range of implanted He+.