Buried Nano - Structured Layers in High Temperature – Pressure Treated Si:He

Abstract:

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The effect of treatment at up to 1400 K (HT) under enhanced hydrostatic pressure (HP, up to 1.2 GPa) on helium implanted single crystalline silicon (Si:He, He ion dose up to 6x1017cm-2, energy up to 300 keV) has been investigated by transmission electron microscopy, secondary ion mass spectrometry, photoluminescence and X-Ray methods. The treatment of Si:He at ≤ 920 K - HP results in a formation of buried nano-structured layers containing helium filled cavities/bubbles and numerous extended defects; many less dislocations are created at ≥ 1270 K in Si:He treated under HP. HP affects the recrystallization of amorphous Si, diffusivity of implanted He and of implantation-induced defects and thus promotes the creation of more but smaller He-filled cavities/bubbles as well as other defects near the range of implanted He+.

Info:

Periodical:

Solid State Phenomena (Volume 114)

Edited by:

Witold Lojkowski and John R. Blizzard

Pages:

285-290

DOI:

10.4028/www.scientific.net/SSP.114.285

Citation:

A. Misiuk et al., "Buried Nano - Structured Layers in High Temperature – Pressure Treated Si:He", Solid State Phenomena, Vol. 114, pp. 285-290, 2006

Online since:

July 2006

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Price:

$35.00

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