Ab Initio Simulations of Low-K and Ultra Low-K Dielectric Interconnects

Abstract:

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Ab initio molecular dynamics simulations were carried out to study low-k/ultra low-k dielectric systems comprising Cu/Ta/SiLK-like polymer. A study of the motion of single metal atoms of Cu and Ta in the SiLK-like polymer showed that Cu atom motions are effected by jumps between cavities inside the polymer and that Ta is more sluggish than Cu not only because of its larger mass but also because of stronger affinity to the polymer. It was also found that crosslinking of the polymer did not affect the motion of the metal atoms. Simulations of deposition showed that a thin Ta diffusion barrier does not have good structural integrity to prevent Cu-diffusion when directly deposited onto the SiLK; the barrier performance was greatly improved after introducing a Si-based film between the Ta and SiLK.

Info:

Periodical:

Solid State Phenomena (Volumes 121-123)

Edited by:

Chunli BAI, Sishen XIE, Xing ZHU

Pages:

1061-1064

DOI:

10.4028/www.scientific.net/SSP.121-123.1061

Citation:

V. B.C. Tan et al., "Ab Initio Simulations of Low-K and Ultra Low-K Dielectric Interconnects", Solid State Phenomena, Vols. 121-123, pp. 1061-1064, 2007

Online since:

March 2007

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Price:

$35.00

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