Ab Initio Simulations of Low-K and Ultra Low-K Dielectric Interconnects

Vincent B.C. Tan; L. Dai; S.W. Yang; X.T. Chen; P. Wu

doi:10.4028/www.scientific.net/SSP.121-123.1061

Paper Titles

Inhomogeneous Lattice Distortion in Metallic Nanoparticles
p.1045

Evolution Mechanisms of Nano-Clusters in a Large-Scale System of 10⁶ Liquid Metal Atoms During Rapid Cooling Processes
p.1049

Molecular Dynamics Simulation of the Solidification of Liquid Nickel Nanowires
p.1053

Modeling and Simulation of Carbon Nanotube Interconnect Network
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Ab Initio Simulations of Low-K and Ultra Low-K Dielectric Interconnects
p.1061

Electrodynamics of Left-Handed Medium
p.1065

Size Effect on the Bandgap of Semiconductor Nanocrystals
p.1069

Kinetic Monte Carlo Simulation of Semiconductor Quantum Dot Growth
p.1073

Electronic States in a Non-Concentric Circular Quantum Corral
p.1077

HomeSolid State PhenomenaSolid State Phenomena Vols. 121-123Ab Initio Simulations of Low-K and Ultra Low-K...

Ab Initio Simulations of Low-K and Ultra Low-K Dielectric Interconnects

Abstract:

Ab initio molecular dynamics simulations were carried out to study low-k/ultra low-k dielectric systems comprising Cu/Ta/SiLK-like polymer. A study of the motion of single metal atoms of Cu and Ta in the SiLK-like polymer showed that Cu atom motions are effected by jumps between cavities inside the polymer and that Ta is more sluggish than Cu not only because of its larger mass but also because of stronger affinity to the polymer. It was also found that crosslinking of the polymer did not affect the motion of the metal atoms. Simulations of deposition showed that a thin Ta diffusion barrier does not have good structural integrity to prevent Cu-diffusion when directly deposited onto the SiLK; the barrier performance was greatly improved after introducing a Si-based film between the Ta and SiLK.