Kinetic Monte Carlo Simulation of Semiconductor Quantum Dot Growth
Performing an event-based continuous kinetic Monte Carlo (KMC) simulation, We investigate the growth conditions which are important to form semiconductor quantum dot (QD) in molecular beam epitaxy (MBE) system. The simulation results provide a detailed characterization of the atomic kinetic effects. The KMC simulation is also used to explore the effects of periodic strain to the epitaxy growth of QD. The simulation results are in well qualitative agreement with experiments.
Chunli BAI, Sishen XIE, Xing ZHU
C. Zhao et al., "Kinetic Monte Carlo Simulation of Semiconductor Quantum Dot Growth", Solid State Phenomena, Vols. 121-123, pp. 1073-1076, 2007