Paper Titles

Modeling and Simulation of Carbon Nanotube Interconnect Network
p.1057

Ab Initio Simulations of Low-K and Ultra Low-K Dielectric Interconnects
p.1061

Electrodynamics of Left-Handed Medium
p.1065

Size Effect on the Bandgap of Semiconductor Nanocrystals
p.1069

Kinetic Monte Carlo Simulation of Semiconductor Quantum Dot Growth
p.1073

Electronic States in a Non-Concentric Circular Quantum Corral
p.1077

The Size and Temperature Effects of Coercivity for the Magnetic Nanowire: Monte Carlo Simulation
p.1081

The Influences of Size and Anisotropy Strength on Hysteresis Scaling for Anisotropy Heisenberg Multilayer Films
p.1085

Modeling of the Ionized Fluid Flow through a Cone-Shaped Nanopore
p.1089

HomeSolid State PhenomenaSolid State Phenomena Vols. 121-123Kinetic Monte Carlo Simulation of Semiconductor...

Kinetic Monte Carlo Simulation of Semiconductor Quantum Dot Growth

Article Preview

Abstract:

Performing an event-based continuous kinetic Monte Carlo (KMC) simulation, We investigate the growth conditions which are important to form semiconductor quantum dot (QD) in molecular beam epitaxy (MBE) system. The simulation results provide a detailed characterization of the atomic kinetic effects. The KMC simulation is also used to explore the effects of periodic strain to the epitaxy growth of QD. The simulation results are in well qualitative agreement with experiments.

You might also be interested in these eBooks

Nanoscience and Technology

Info:

Periodical:

Solid State Phenomena (Volumes 121-123)

Pages:

1073-1076

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.121-123.1073

Citation:

Cite this paper

Online since:

March 2007

Authors:

C. Zhao, Y.H. Chen, J. Sun, W. Lei, C.X. Cui, L.K. Yu, K. Li, Z.G. Wang

Keywords:

Kinetic Effect, Molecular Beam Epitaxy, Monte-Carlo Simulation, Quantum Dot (QD)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2007 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] R. Leon, P. M. Petroff, D. Leonard, S. Fafard: Science 267 (1995), (1966).

[2] F. Klopf, J. P. Reithmaier, A. Forchel: Appl. Phys. Lett 77 (2000) 1419.

[3] Wang Zhanguo, Chen Yonghai, Liu Fengqi, Xu Bo: J. Cryst. Growth 227-228 (2001), 1132.

[4] T. V. Lippen, R. Nötzel, G. J. Hamhuis, and J. H. Wolter: Appl. Phys. Lett 85 (2004), 118.

[5] Jie Sun, P. Jin, Z. G. Wang, H. Z. Zhang, Z.Y. Wang, L. Z. Hu: Thin Solid Films 476 (2005) 68.

[6] L. K. Yu, B. Xu, Z. G. Wang, P. Jin, C. Zhao, W. Lei, J. Sun: J. Cryst. Growth (in press).

[7] Jie Sun, Peng jin and Zhan-Guo Wang: Nanotechnology 15 (2004) 1763.

[8] B. G. Liu, J. Wu, E. G. Wang, and Z. Zhang: Phys. Rev. Lett 83 (1999), 1195.

[9] M. Meixner and E. Schöll: Phys. Rev. B 67 (2003) 121202.

[10] M. Meixner, R. Kunert, and E. Schöll: Phys. Rev. B 67 (2003) 195301.

[11] C. S. Lee, B. Kahng and A. L. Barabasi: Appl. Phys. Lett 78 (2001) 984.

[12] E. Schöll and S. Bose: Solid State Electron 42 (1998) 1587.

[13] C. X. Cui, Y. H. Chen, C. L. Zhang, P. Jin, G. X. Shi, C. Zhao, B. Xu, Z. G. Wang: Physica E (in press).

[14] D. Bimberg, M. Grundmann and N. N. Ledentsov: Quantum Dot Heterostructures (John Wiley & Sons, Chichester, 1999).

[15] Hideaki Saito, Kenichi Nishi, and Shigeo Sugou: Appl. Phys. Lett 74 (1999) 1224.