Kinetic Monte Carlo Simulation of Semiconductor Quantum Dot Growth

Abstract:

Article Preview

Performing an event-based continuous kinetic Monte Carlo (KMC) simulation, We investigate the growth conditions which are important to form semiconductor quantum dot (QD) in molecular beam epitaxy (MBE) system. The simulation results provide a detailed characterization of the atomic kinetic effects. The KMC simulation is also used to explore the effects of periodic strain to the epitaxy growth of QD. The simulation results are in well qualitative agreement with experiments.

Info:

Periodical:

Solid State Phenomena (Volumes 121-123)

Edited by:

Chunli BAI, Sishen XIE, Xing ZHU

Pages:

1073-1076

DOI:

10.4028/www.scientific.net/SSP.121-123.1073

Citation:

C. Zhao et al., "Kinetic Monte Carlo Simulation of Semiconductor Quantum Dot Growth", Solid State Phenomena, Vols. 121-123, pp. 1073-1076, 2007

Online since:

March 2007

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.