Synthesis and Characterization of In-Doped SnO2 (ITO) Nanowires
Large-scale synthesis of In-doped SnO2 (ITO) nanowires was achieved by direct thermal evaporation of a mixture of Sn and In powders at 900°C in an Argon atmosphere. Scanning electron microscopy and transmission electron microscopy observations show that ITO nanowires have diameter ranging from 20 to 100 nm and lengths up to several tens of micrometers. By altered the reaction temperature, we find that the temperature of the reaction is the critical factor for the morphologies and sizes of the ITO nanowires.
Chunli BAI, Sishen XIE, Xing ZHU
Z. Y. Huang "Synthesis and Characterization of In-Doped SnO2 (ITO) Nanowires", Solid State Phenomena, Vols. 121-123, pp. 209-214, 2007