Direct Wafer Bonding for Nanostructure Preparations

Abstract:

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Direct Wafer Bonding has been widely developed and is very attractive for a lot of applications. Using original techniques based on direct bonding enable to carry out specific engineered substrates. Various illustrations are given among which twisted Si-Si bonded substrates, where buried dislocation networks play a key role in the subsequent elaboration of nanostructures.

Info:

Periodical:

Solid State Phenomena (Volumes 121-123)

Edited by:

Chunli BAI, Sishen XIE, Xing ZHU

Pages:

29-32

DOI:

10.4028/www.scientific.net/SSP.121-123.29

Citation:

H. Moriceau et al., "Direct Wafer Bonding for Nanostructure Preparations", Solid State Phenomena, Vols. 121-123, pp. 29-32, 2007

Online since:

March 2007

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Price:

$35.00

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