Direct Wafer Bonding for Nanostructure Preparations

Hubert Moriceau; F. Rieutord; C. Morales; A.M. Charvet; O. Rayssac; B. Bataillou; F. Fournel; J. Eymery; A. Pascale; P. Gentile; A. Bavard; J. Mézière; Christophe Maleville; B. Aspar

doi:10.4028/www.scientific.net/SSP.121-123.29

Paper Titles

Superconductivity in Entirely End-Bonded Multi-Walled Carbon Nanotubes
p.13

Single-Crystal Iron Nanowire Arrays
p.17

Preparation and Characterization of CeO₂ with Different Particle Sizes and Morphology
p.21

Shape Evolution of ZnO Nanostructures Modified by Trioctylphosphine Oxide
p.25

Direct Wafer Bonding for Nanostructure Preparations
p.29

Laser Induced Surface Nanostructuring on Ultra-Thin Amorphous Si Films
p.33

Electrochemical Pore Etching in n- and p-Type Ge
p.37

Synthesis and Characterization of Nanocrystalline TiO₂ Doped with 2 at.% Sc³⁺ and V⁵⁺ Ions
p.41

Formation of α-Fe₂O₃ Nanoflakes by Heating Fe in Air
p.45

HomeSolid State PhenomenaSolid State Phenomena Vols. 121-123Direct Wafer Bonding for Nanostructure...

Direct Wafer Bonding for Nanostructure Preparations

Abstract:

Direct Wafer Bonding has been widely developed and is very attractive for a lot of applications. Using original techniques based on direct bonding enable to carry out specific engineered substrates. Various illustrations are given among which twisted Si-Si bonded substrates, where buried dislocation networks play a key role in the subsequent elaboration of nanostructures.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Solid State Phenomena (Volumes 121-123)

Pages:

29-32

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.121-123.29

Citation:

Cite this paper

Online since:

March 2007

Authors:

Hubert Moriceau, F. Rieutord, C. Morales, A.M. Charvet, O. Rayssac, B. Bataillou, F. Fournel, J. Eymery, A. Pascale, P. Gentile, A. Bavard, J. Mézière, Christophe Maleville, B. Aspar

Keywords:

Bonded Heterostructures, Bonding Interface, Direct Wafer Bonding, Dislocation, Hydrophilic, Hydrophobic, Nanometer-Scale, Periodic Networks, Si-Si Bonded Structures, SOI

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] H. Moriceau et al., Semiconductor Wafer Bonding VI; ECS Proceedings Vol. 01-27 (2001) pp.1-16.

Google Scholar

[2] Q.Y. Tong and U. Gösele, Semiconductor wafer bonding, Ed. John Wiley, New York (1999).

Google Scholar

[3] C. Maleville et al., Semiconductor Wafer Bonding IV; ECS Proceedings Vol. 97-36 (1997) pp.46-55.

Google Scholar

[4] H. Moriceau et al., Semiconductor Wafer Bonding VII, ECS Proceedings Vol. 03-19, (2003) pp.110-117.

Google Scholar

[5] M. K. Weldon et al., J. Vac. Sci. Technol. B, 14, (1996) 3095; R. Stengl et al., Jpn. J. Appl. Phys., 28, (1989) 1735.

Google Scholar

[6] O. Rayssac et al., Proceedings of the 2 nd International Conference on Materials for Microelectronics, IOM Communications, (1998), 183.

Google Scholar

[7] F. Rieutord et al., Phys. Rev. B, 63, (2001) p.125408.

Google Scholar

[8] B Aspar et al., 2005 ECS Conference on Semiconductor Wafer Bonding, Quebec. In press.

Google Scholar

[9] M. Bruel, Electron. Lett., 31 (14), (1995), 1201; A.J. Auberton-Hervé et al., Electrochemical Society Proceedings PV 99-3, (1999) p.93; Smart Cut™ and UNIBOND™ are trade marks of SOITEC.

Google Scholar

[10] B. Ghyselen et al., Proceedings of the ICSI 3 Conference, Santa-Fe (USA), March 2003 & F. Letertre et al., Spring MRS, Vol. 809 (2004) p.153.

Google Scholar

[11] A. Tauzin et al., 2005 ECS Conference on Semiconductor Wafer Bonding, Quebec. In press.

Google Scholar

[12] F. Fournel et al., Materials Science & Engineering B, B73 (1-3), 3 April, (2000) pp.42-46.

Google Scholar

[13] R.A. Wind et al., Applied Physic. Letters, Vol. 78, No. 15, (2001 ), pp.2205-2207.

Google Scholar

[14] F. Leroy et al., Surface Science, vol 545 (3), (2003).

Google Scholar