In this paper, novel Ni Germanosilicide technology using the 1%-nitrogen doped Ni and pure Ni stack structure has been proposed for nano-scale CMOS technology. The Ni Germanosilicide is formed on the Si0.8Ge0.2 layer which is known as an optimal composition for strained silicon application. Proposed structure showed much better thermal stability than pure Ni case. Silicide characteristics such as the sheet resistance, the interface uniformity of silicide/SiGe, surface roughness, and depth profile of the Ni, Si, and Ge showed little degradation even with the high temperature post-silicidation annealing at 600 for 30 min. Therefore, the proposed method is highly promising for nano-scale CMOS technology.