The Meso- Piezo-Resistive Effects in MEMS/NEMS

Ting Dun Wen; Li Ping Xu; Ji Jun Xiong; Wen Dong Zhang

doi:10.4028/www.scientific.net/SSP.121-123.619

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HomeSolid State PhenomenaSolid State Phenomena Vols. 121-123The Meso- Piezo-Resistive Effects in MEMS/NEMS

The Meso- Piezo-Resistive Effects in MEMS/NEMS

Abstract:

Meso- piezoresistive effect is proposed, which is defined as “Strain Tuning of the resonant current”, in order to convert a weak mechanical signal into a strong tunneling current signal. If a mechanical signal is acted on an related mechanical nano-structure, the corresponding strain distribution will be produced in the structure; the built- in electric field will be resulted from the strain in system in some conditions; the strain and built-in electric filed will result in the change of electronic energy states; the change of electronic energy state will influence on the value of the tunneling current. Two experimental units are designed, one being used to detect an acoustic signal under sea, other to detect acceleration.

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Solid State Phenomena (Volumes 121-123)

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619-622

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.121-123.619

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Online since:

March 2007

Authors:

Ting Dun Wen, Li Ping Xu, Ji Jun Xiong, Wen Dong Zhang

Keywords:

Built-In Electric Field, Meso-Piezo-Resistive Effect , Resonant Current Tunneling, Strain

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