The Resonant Tunneling in Si1-xGex/Si Superlattices
It has been studied that the dependence of tunneling coefficient T on the ratio x of Ge, on the barrier width B L , on the well width W L and on the periodicity N in periodic superlattices Si1-xGex/Si by the method of transfer matrix, and shown in figures. The dependence of peak region width W on the above parameters are discussed in detail, and plotted, those are fitted in functions. These results may be useful to convert a weak mechanical signal into a strong tunneling current signal and to design electron devices based on meso- piezoresistive effect in the superlattices Si1-xGex/Si.
Chunli BAI, Sishen XIE, Xing ZHU
L. P. Xu et al., "The Resonant Tunneling in Si1-xGex/Si Superlattices", Solid State Phenomena, Vols. 121-123, pp. 645-648, 2007