The Resonant Tunneling in Si1-xGex/Si Superlattices

Abstract:

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It has been studied that the dependence of tunneling coefficient T on the ratio x of Ge, on the barrier width B L , on the well width W L and on the periodicity N in periodic superlattices Si1-xGex/Si by the method of transfer matrix, and shown in figures. The dependence of peak region width W on the above parameters are discussed in detail, and plotted, those are fitted in functions. These results may be useful to convert a weak mechanical signal into a strong tunneling current signal and to design electron devices based on meso- piezoresistive effect in the superlattices Si1-xGex/Si.

Info:

Periodical:

Solid State Phenomena (Volumes 121-123)

Edited by:

Chunli BAI, Sishen XIE, Xing ZHU

Pages:

645-648

DOI:

10.4028/www.scientific.net/SSP.121-123.645

Citation:

L. P. Xu et al., "The Resonant Tunneling in Si1-xGex/Si Superlattices", Solid State Phenomena, Vols. 121-123, pp. 645-648, 2007

Online since:

March 2007

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Price:

$35.00

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