The Resonant Tunneling in Si_1-xGe_x/Si Superlattices

Abstract:

It has been studied that the dependence of tunneling coefficient T on the ratio x of Ge, on the barrier width B L , on the well width W L and on the periodicity N in periodic superlattices Si1-xGex/Si by the method of transfer matrix, and shown in figures. The dependence of peak region width W on the above parameters are discussed in detail, and plotted, those are fitted in functions. These results may be useful to convert a weak mechanical signal into a strong tunneling current signal and to design electron devices based on meso- piezoresistive effect in the superlattices Si1-xGex/Si.

• Periodical: Solid State Phenomena (Volumes 121-123)
• Pages: 645-648
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.121-123.645
• Online since: March 2007
• Authors: Li Ping Xu, Ting Dun Wen, Xiao Feng Yang, Wen Dong Zhang
• Keywords: Meso-Piezo-Resistive Effect , Strain Tuning, Superlattice, Tunneling Coefficient

References

[1] H. Yamamoto, KANIE, and TANIGUCHI: Phys. Stat. Sol (b) Vol. 154 (1989), p.195.

[2] C. L. Roy and ARIF Khan: Physical Review B Vol 49 (21) (1994), p.14979.

[3] W. Salejda: Physica A Vol. 232 (1996), p.769.

[4] Wtodzimierz Salejda, Pawef Szyszuk: Physica A Vol. 252 (1998), p.547.

[5] M. H. Tyc, W. Salejda: Physica A Vol. 303 (2002), p.493.

[6] Jung-Hui Tsai: Appl. Phys. Lett Vol. 83(13) (2003), p.2695.

[7] L. P. Xu, T. D. Wen and E. Anastassakis: J. Physics D. Vol. 31 (1998), p.1180.

[8] T D Wen, E Anastassakis and L P Xu: Phys. Stat. Sol. (a) Vol. 154 (1996), p.635.

[9] T. D. Wen, L. P. Xu and E Anastassakis: Phys. Stat. Sol. (a) Vol. 177 (2000), p.467.

[10] Erich Kasper, Properties of Strained and Relaxed Silicon Germanium (The Institution of Electrical Engineers 1995).

[11] Masahiro Tsuchiya and Hiroyuki Sakaki: Appl. Phys. Lett. Vol. 48 (2) (1986), p.88.

[12] Y. Zebda and A. M. Kan'an: J. Appl. Phys. Vol. 72 (2) (1992), 559.