High-Frequency Capability of Schottky-Barrier Carbon Nanotube FETs

Leonardo C. Castro; D.L. Pulfrey; D.L. John

doi:10.4028/www.scientific.net/SSP.121-123.693

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HomeSolid State PhenomenaSolid State Phenomena Vols. 121-123High-Frequency Capability of Schottky-Barrier...

High-Frequency Capability of Schottky-Barrier Carbon Nanotube FETs

Abstract:

The high-frequency capability of carbon nanotube field-effect transistors is investigated by simulating the small-signal performance of a device with negative-barrier Schottky contacts for the source and drain, and with a small, ungated region of nanotube between the end contacts and the edge of the wrap-around gate electrode. The overall structure is shown to exhibit resonant behaviour, which leads to a significant bias dependence of the small-signal capacitances and transconductance. This could lead to high-frequency figures of merit (fT and fmax) in the terahertz regime.

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Periodical:

Solid State Phenomena (Volumes 121-123)

Pages:

693-696

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.121-123.693

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Online since:

March 2007

Authors:

Leonardo C. Castro, D.L. Pulfrey, D.L. John

Keywords:

Carbon Nanotube Field-Effect Transistor, High Frequency Figures of Merit , Resonance, Small-Signal Properties

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References

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