High-Frequency Capability of Schottky-Barrier Carbon Nanotube FETs

Abstract:

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The high-frequency capability of carbon nanotube field-effect transistors is investigated by simulating the small-signal performance of a device with negative-barrier Schottky contacts for the source and drain, and with a small, ungated region of nanotube between the end contacts and the edge of the wrap-around gate electrode. The overall structure is shown to exhibit resonant behaviour, which leads to a significant bias dependence of the small-signal capacitances and transconductance. This could lead to high-frequency figures of merit (fT and fmax) in the terahertz regime.

Info:

Periodical:

Solid State Phenomena (Volumes 121-123)

Edited by:

Chunli BAI, Sishen XIE, Xing ZHU

Pages:

693-696

DOI:

10.4028/www.scientific.net/SSP.121-123.693

Citation:

L. C. Castro et al., "High-Frequency Capability of Schottky-Barrier Carbon Nanotube FETs", Solid State Phenomena, Vols. 121-123, pp. 693-696, 2007

Online since:

March 2007

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Price:

$35.00

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