Synthesis of Resists Containing a Photoacid Generator Group for Atomic Force Microscope Lithography

Abstract:

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Photoacid generators (PAGs) have been widely used as a key component in a chemically amplified photoresist system. The PAG monomer containing an arylsulfonium triflate group was synthesized and was polymerized with benzyl methacrylates. The molecular weight and the content of PAG were controlled to improve thermal stability and sensitivity for atomic force microscope lithography. The fabrication of anodization patterns, which can be enhanced by addition of PAG unit to resist, was achieved at the low bias voltage and the high speed of AFM patterning. The physical properties of resists and lithographic factors affecting the high speed AFM lithography will be discussed.

Info:

Periodical:

Solid State Phenomena (Volumes 121-123)

Edited by:

Chunli BAI, Sishen XIE, Xing ZHU

Pages:

697-700

DOI:

10.4028/www.scientific.net/SSP.121-123.697

Citation:

S. W. Park et al., "Synthesis of Resists Containing a Photoacid Generator Group for Atomic Force Microscope Lithography ", Solid State Phenomena, Vols. 121-123, pp. 697-700, 2007

Online since:

March 2007

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Price:

$35.00

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