Patterning of the Self-Assembled Monolayer Using the Zero Residual Nano-Imprint Lithography

Abstract:

Self-Assembled Monolayer (SAM) is a single layer of ordered molecules absorbed on a surface by chemical bonding between the molecular head group and the surface. The surface properties can be controlled by the terminal functional group of the SAM layer. In order to utilize SAM layers for device applications, SAM layer needs to be patterned as a sub-micron size. Patterning of SAM layer in sub-micron size has been done by various techniques including direct-writing by dip-pen nano lithography, selective etching with UV photons, and selective deposition of SAM layer by &-contact printing. In this study, silane based SAM layer was patterned to the sub-micron size using zero residual Nano imprint Lithography, which is regarded as next generation lithography technique due to its simplicity, high throughput and high resolution pattern transferring capability. Using zero-residual layer imprinting, 300nm~2um sized SAM patterns can successfully fabricated. In order to check the surface property of patterned SAM layer, a solution containing nano Ag particles was spin-coated on the SAM patterned substrate and nano Ag particles were selectively deposited on the substrate.

• Periodical: Solid State Phenomena (Volumes 124-126)
• Pages: 523-526
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.124-126.523
• Online since: June 2007
• Authors: Ki Yeon Yang, Jong Woo Kim, Sung Hoon Hong, Heon Lee
• Keywords: Nanoimprint Lithography, Patterning SAMs, Zero Residual Layer Imprinting

References

[1] Nuzzo R.G.; Allara, D.L. J. Am. Chem. Soc. 105 (1983) 44814483.

[2] Chidsey, C. E. D., Loiacono, D. N. Langmuir 6 (1990) 682-691.

[3] Abbott, N. L., Folkers, J. P., Whitesides, G. M. Science 257 (1992) 1380-1382.

[4] E. Casero, M. Darder, K. Takada, H.D. Abruna, F. Pariente, E. Lorenzo, Langmuir 15 (1999) 127.

[5] P.E. Laibnis, G.M. Whitesides, J. Am. Chem. Soc. 114 (1992) 9022.

[6] Kumar, A., Biebuyck, H. A., Whitesides, G. M. Langmuir 10 (1994) 1499.

[7] Xu, S., Liu, G. Langmuir 13 (1997) 12.

[8] S.Y. Chou, P.R. Krauss, W. Zhang, L. Guo, L. Zhuang, J. Vac. Sci. Technol. B 15 (1997) 2897.

[9] H. Lee, G. Y. Jung, Microelectronic engineering 77 (2005) 168-174.

[10] G. Y. Jung, S. Ganapathiappan, X. Li, D. A. A. Ohlberg, D. L. Olynick, Y. Chen, W. M. Tong and R. S. Williams: Applied Physics A Vol 7 (2004).