Fabrication and Characterization of SiO2 Based Waveguide Co-Doped with Si-Nanocrystal and Er3+

Se Weon Choi; Hyeon Taek Son; Chang Seog Kang; Junji Nishii

doi:10.4028/www.scientific.net/SSP.124-126.515

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HomeSolid State PhenomenaSolid State Phenomena Vols. 124-126Fabrication and Characterization of SiO2 Based...

Fabrication and Characterization of SiO₂ Based Waveguide Co-Doped with Si-Nanocrystal and Er³⁺

Abstract:

Si and Er co-doped SiO2 films were fabricated by radio-frequency (RF) magnetron sputtering technique with a Si-Er-SiO2 target. The optical gain of 0.7 dB/cm was confirmed by the direct pumping of Er3+ using the laser diode (LD) of 980 nm in wavelength and 60 mW in output power. On the contrary, the pumping Si-nanocrystals by the Hg lamp 365 nm (1.5 W/cm2) induced the absorption loss above 1.48 μm region in wavelength, which was attributed to the free carrier absorption of Si-nanocrystals.