Fabrication and Characterization of SiO2 Based Waveguide Co-Doped with Si-Nanocrystal and Er3+

Abstract:

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Si and Er co-doped SiO2 films were fabricated by radio-frequency (RF) magnetron sputtering technique with a Si-Er-SiO2 target. The optical gain of 0.7 dB/cm was confirmed by the direct pumping of Er3+ using the laser diode (LD) of 980 nm in wavelength and 60 mW in output power. On the contrary, the pumping Si-nanocrystals by the Hg lamp 365 nm (1.5 W/cm2) induced the absorption loss above 1.48 μm region in wavelength, which was attributed to the free carrier absorption of Si-nanocrystals.

Info:

Periodical:

Solid State Phenomena (Volumes 124-126)

Edited by:

Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park

Pages:

515-518

DOI:

10.4028/www.scientific.net/SSP.124-126.515

Citation:

S. W. Choi et al., "Fabrication and Characterization of SiO2 Based Waveguide Co-Doped with Si-Nanocrystal and Er3+", Solid State Phenomena, Vols. 124-126, pp. 515-518, 2007

Online since:

June 2007

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Price:

$35.00

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