Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip
We have synthesized a Eu2+-activated Sr3MgSi2O8 blue phosphor and (Sr,Ba)2SiO4 yellow phosphor. We fabricated a phosphor-conversion white light emitting diode(LED) using an InGaN chip that emits 400 nm near-ultraviolet(n-UV) light and phosphors that emit in the blue and yellow region. When the white LED was operated at a forward-bias current of 20 mA at room temperature(RT), the color temperature(Tcp), average color rendering(Ra), operating voltage(Vf) and luminous efficacy(ηL) were estimated to be 5800K, 72.08, 3.4V, and 7.61 lm/W, respectively. The commission International de I’Eclarirage(CIE) chromaticity coordinates obtained from the measured spectra remained almost constant during the forward-baias current increase from 0.5 mA to 60 mA.
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
K. J. Choi et al., "Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip", Solid State Phenomena, Vols. 124-126, pp. 499-502, 2007