Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip

Kyoung Jae Choi; Joung Kyu Park; Kyung Nam Kim; Chang Hae Kim; Ho Kun Kim

doi:10.4028/www.scientific.net/SSP.124-126.499

Paper Titles

Investigation of Thermal Measurement Variables in High Power GaN-Based LEDs
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Detection of Toxic Organophosphate Nerve Agents Using DBR Porous Silicon Chip
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Formation of Nanocrystallites in the nc-Si Films by Co-Sputtering Aluminium and Silicon
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Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip
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Inductively Coupled Plasma Reactive Ion Etching of Ge-SiO₂ and SiON Using C₂F₆ and NF₃-Based Gas Mixtures
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Comparison of Amorphous Selenium and Mercuric Iodide Film for Diagnostic X-Ray Imaging
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Embodiment and Luminescence Properties of Sr₃SiO₅:Eu(Yellow-Orange Phosphor) by Co-Doping Lanthanide
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Fabrication and Characterization of SiO₂ Based Waveguide Co-Doped with Si-Nanocrystal and Er³⁺
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Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip

Abstract:

We have synthesized a Eu2+-activated Sr3MgSi2O8 blue phosphor and (Sr,Ba)2SiO4 yellow phosphor. We fabricated a phosphor-conversion white light emitting diode(LED) using an InGaN chip that emits 400 nm near-ultraviolet(n-UV) light and phosphors that emit in the blue and yellow region. When the white LED was operated at a forward-bias current of 20 mA at room temperature(RT), the color temperature(Tcp), average color rendering(Ra), operating voltage(Vf) and luminous efficacy(ηL) were estimated to be 5800K, 72.08, 3.4V, and 7.61 lm/W, respectively. The commission International de I’Eclarirage(CIE) chromaticity coordinates obtained from the measured spectra remained almost constant during the forward-baias current increase from 0.5 mA to 60 mA.