Formation of Nanocrystallites in the nc-Si Films by Co-Sputtering Aluminium and Silicon

Jae Hyun Shim; Nam Hee Cho

doi:10.4028/www.scientific.net/SSP.124-126.495

Paper Titles

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Preparation and Characterization of 70TeO₂-30WO₃ Glass Thin Films by Radio-Frequency Magnetron Sputtering Method
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Detection of Toxic Organophosphate Nerve Agents Using DBR Porous Silicon Chip
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Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip
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Inductively Coupled Plasma Reactive Ion Etching of Ge-SiO₂ and SiON Using C₂F₆ and NF₃-Based Gas Mixtures
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Comparison of Amorphous Selenium and Mercuric Iodide Film for Diagnostic X-Ray Imaging
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Embodiment and Luminescence Properties of Sr₃SiO₅:Eu(Yellow-Orange Phosphor) by Co-Doping Lanthanide
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HomeSolid State PhenomenaSolid State Phenomena Vols. 124-126Formation of Nanocrystallites in the nc-Si Films...

Formation of Nanocrystallites in the nc-Si Films by Co-Sputtering Aluminium and Silicon

Abstract:

The nanostructural and optical features of Al-doped Si thin films, which were prepared by co-sputtering Al-chips and a Si main target, were investigated in terms of Al-doping and post-deposition heat-treatment conditions; the heat treatment was carried out at temperatures of 400 ~ 1100 °C. The structural and chemical features are related with the photoluminescence (PL) phenomena of the films. The PL intensity as well as the concentration of Si nanocrystallites were increased by doping particular amount of Al in the films.