Formation of Nanocrystallites in the nc-Si Films by Co-Sputtering Aluminium and Silicon

Abstract:

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The nanostructural and optical features of Al-doped Si thin films, which were prepared by co-sputtering Al-chips and a Si main target, were investigated in terms of Al-doping and post-deposition heat-treatment conditions; the heat treatment was carried out at temperatures of 400 ~ 1100 °C. The structural and chemical features are related with the photoluminescence (PL) phenomena of the films. The PL intensity as well as the concentration of Si nanocrystallites were increased by doping particular amount of Al in the films.

Info:

Periodical:

Solid State Phenomena (Volumes 124-126)

Edited by:

Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park

Pages:

495-498

DOI:

10.4028/www.scientific.net/SSP.124-126.495

Citation:

J. H. Shim and N. H. Cho, "Formation of Nanocrystallites in the nc-Si Films by Co-Sputtering Aluminium and Silicon", Solid State Phenomena, Vols. 124-126, pp. 495-498, 2007

Online since:

June 2007

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$35.00

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