Sol-Gel Synthesis of GdAlO3 Buffer Layers on SrTiO3 (100) Substrates

Abstract:

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To identify the possibility of using GdAlO3 (GAO) as a buffer layer for YBa2Cu3O7-δ (YBCO) coated superconductor wire, we report the result of GAO deposition on SrTiO3 (STO) single crystal substrates by sol-gel processing. Precursor solution was prepared by dissolving stoichiometric quantities of gadolinium hexahydrate and aluminum isoproxide in a mixed binary solvent (2-4 pentanedione:methyl alcohol=1:1). The solutions were spin-coated on STO (100) single crystal substrates and heated at 500~1100 for 2 h in wet Ar-5% H2 atmosphere. A FESEM observation of the surface morphology of the GAO has shown that it has a very smooth surface with a faceted morphology indicating epitaxy. It was shown in x-ray diffraction characterization that epitaxial GAO films with epitaxial orientation relationship of (001)[112]GAO||(100)[110]STO have been grown on STO (100) substrates.

Info:

Periodical:

Solid State Phenomena (Volumes 124-126)

Edited by:

Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park

Pages:

647-650

DOI:

10.4028/www.scientific.net/SSP.124-126.647

Citation:

J. C. Bang et al., "Sol-Gel Synthesis of GdAlO3 Buffer Layers on SrTiO3 (100) Substrates", Solid State Phenomena, Vols. 124-126, pp. 647-650, 2007

Online since:

June 2007

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Price:

$35.00

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