Characterization of Cu(In,Ga)3Se5 Thin Film for Top Cell in CIGS Tandem Solar Cells

Ki Hwan Kim; Byung Tae Ahn; Se Han Kwon; Jae Ho Yun; Kyung Hoon Yoon

doi:10.4028/www.scientific.net/SSP.124-126.959

Paper Titles

Nano Composite Membranes of Branched Sulfonated Poly(Ether Ketone Sulfone) and SiO₂ for Fuel Cell Application
p.943

Electrochemical Performance of Activated Carbon Electrode Added with LiCoO₂ for Hybrid Capacitor
p.947

Catalytic Effect of Ti₅Si₃ on Dehydrogenation of NaAlH₄
p.951

Novel Low-Temperature Synthesis and Characterization of Lithium Cobalt Dioxide for Lithium Rechargeable Batteries
p.955

Characterization of Cu(In,Ga)₃Se₅ Thin Film for Top Cell in CIGS Tandem Solar Cells
p.959

Application of Anodic Titanium Oxide to Dye-Sensitized Solar Cells
p.963

Electrodeposition of CdS Nanostructures for Solar Cells Using Nano Imprint Templates
p.967

Effect of Various Lithium Salts in TEGDME Based Electrolyte for Li/Pyrite Battery
p.971

Formation of CuIn_1-xAl_xSe₂ Thin Films by Selenization of Metallic Precursors in Se Vapor
p.975

HomeSolid State PhenomenaSolid State Phenomena Vols. 124-126Characterization of Cu(In,Ga)3Se5 Thin Film for...

Characterization of Cu(In,Ga)₃Se₅ Thin Film for Top Cell in CIGS Tandem Solar Cells

Abstract:

Cu(In,Ga)3Se5 films were deposited on soda-lime glass substrate by three-stage co-evaporation process. In the film, the band gap increased as the Cu content decreased and also as the Ga content increased. The grain size became smaller as the Ga content increased. In the Cu1.29(In1-xGax)3Se5 system, the maximum hole concentration was 1x1015 /cm3 when the Ga content was 0.5 and its band gap was 1.45 eV. Comparing the conventional CIGS solar cell with Cu0.8(In0.7Ga0.3)Se2 film, the series resistance is too large, indicating that further p-type doping in the Cu(In,Ga)3Se5 film is necessary to improve cell efficiency for the top cell application in CIGS tandem solar cells.

You might also be interested in these eBooks

Advances in Nanomaterials and Processing

View Preview

Info:

Periodical:

Solid State Phenomena (Volumes 124-126)

Pages:

959-962

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.124-126.959

Citation:

Cite this paper

Online since:

June 2007

Authors:

Ki Hwan Kim, Byung Tae Ahn, Se Han Kwon, Jae Ho Yun, Kyung Hoon Yoon

Keywords:

CIGS, Cu(In,Ga)₃Se₅, Solar Cell, Thin Film, Wide Band Gap

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] M.A. Contreras, K. Ramanathan, J. AbuShama, F. Hasoon, D. L. Young, B. Egaas, and R. Noufi, Prog. Photovolt. Res. Appl. 13, p.209 (2005).

DOI: 10.1002/pip.626

Google Scholar

[2] L. Stolt et al, Proc. 13 th EC Photov. Sol. En. Conf., Nice, p.1351 (1995).

Google Scholar

[3] S.H. Kwon, B.T. Ahn, S.K. Kim, K.H. Yoon, and J. Song, Thin Solid Films 323(1998), p.265.

Google Scholar

[4] D.Y. Lee, J.H. Yun, K.H. Yoon, and B.T. Ahn, Thin Solid Films 410(2001), p.171.

Google Scholar

[5] D. Schmid, M. Ruckh, F. Grunwald, and H.W. Schock, J. Appl. Phys. 73(6) (1993), p.2902.

Google Scholar

[6] R. Herberholz, V. Nadenan, U. Ruhle, C. Koble, H.W. Schock and B. Dimmler, Sol. Energ. Mater. Sol. Cells 49 (1997), p.227. 0. 0 0. 1 0. 2 0. 3 0. 4 0. 5 0. 6.

Google Scholar

[10] [20] [30] [40] [50] Jsc = 37. 90, 12. 20 mA/cm.

Google Scholar

[2] Voc = 0. 417, 0. 578 V F.F. = 60. 4, 66. 8% Eff. = 9. 6, 3. 9 % Cu0. 8InSe2 Cu(In0. 5Ga0. 5)3Se5 Current density (mA/cm.

Google Scholar

[2] ) Voltage (V).

Google Scholar