Formation of CuIn1-xAlxSe2 Thin Films by Selenization of Metallic Precursors in Se Vapor

Jae Ho Yun; R.B.V. Chalapathy; Jeong Chul Lee; Jin Soo Song; Kyung Hoon Yoon

doi:10.4028/www.scientific.net/SSP.124-126.975

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HomeSolid State PhenomenaSolid State Phenomena Vols. 124-126Formation of CuIn1-xAlxSe2 Thin Films by...

Formation of CuIn_1-xAl_xSe₂ Thin Films by Selenization of Metallic Precursors in Se Vapor

Abstract:

CuIn1-xAxlSe2(CIAS) films were obtained by selenization process of metallic precursors. The metallic precursors were deposited sequentially by using sputtering system. As the ratio of Al/(Al+In) in the precursors increased, the chalcopyrite (112) peak shifted to high value and the band-gap of CIAS layer increased to 1.38 eV. However, the bi-layer morphology with well crystallized large grain on the surface and small grain thin bottom layer was observed. Although the sequences of precursors were changed in order to get uniform layer, no distinguishable difference was not observed.

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Periodical:

Solid State Phenomena (Volumes 124-126)

Pages:

975-978

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.124-126.975

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Online since:

June 2007

Authors:

Jae Ho Yun, R.B.V. Chalapathy, Jeong Chul Lee, Jin Soo Song, Kyung Hoon Yoon

Keywords:

CIAS, Metallic Precursor, Selenization

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References

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