CuIn1-xAxlSe2(CIAS) films were obtained by selenization process of metallic precursors. The metallic precursors were deposited sequentially by using sputtering system. As the ratio of Al/(Al+In) in the precursors increased, the chalcopyrite (112) peak shifted to high value and the band-gap of CIAS layer increased to 1.38 eV. However, the bi-layer morphology with well crystallized large grain on the surface and small grain thin bottom layer was observed. Although the sequences of precursors were changed in order to get uniform layer, no distinguishable difference was not observed.