Formation of CuIn1-xAlxSe2 Thin Films by Selenization of Metallic Precursors in Se Vapor

Abstract:

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CuIn1-xAxlSe2(CIAS) films were obtained by selenization process of metallic precursors. The metallic precursors were deposited sequentially by using sputtering system. As the ratio of Al/(Al+In) in the precursors increased, the chalcopyrite (112) peak shifted to high value and the band-gap of CIAS layer increased to 1.38 eV. However, the bi-layer morphology with well crystallized large grain on the surface and small grain thin bottom layer was observed. Although the sequences of precursors were changed in order to get uniform layer, no distinguishable difference was not observed.

Info:

Periodical:

Solid State Phenomena (Volumes 124-126)

Edited by:

Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park

Pages:

975-978

DOI:

10.4028/www.scientific.net/SSP.124-126.975

Citation:

J. H. Yun et al., "Formation of CuIn1-xAlxSe2 Thin Films by Selenization of Metallic Precursors in Se Vapor", Solid State Phenomena, Vols. 124-126, pp. 975-978, 2007

Online since:

June 2007

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$35.00

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