Porous Silicon Layer by Electrochemical Etching for Silicon Solar Cell

Jeong Kim; Sang Wook Park; In Sik Moon; Moon Jae Lee; Dae Won Kim

doi:10.4028/www.scientific.net/SSP.124-126.987

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HomeSolid State PhenomenaSolid State Phenomena Vols. 124-126Porous Silicon Layer by Electrochemical Etching...

Porous Silicon Layer by Electrochemical Etching for Silicon Solar Cell

Abstract:

An Electrochemical etching was used to form the porous silicon (PS) layer on the surface of the crystalline silicon wafer. The PS layer, in this study, will act as an antireflection coating to reduce the reflection of the incident light into the solar cell. The etching solution (electrolyte) was prepared by mixing HF (50%) and ethanol which was introduced for efficient bubble elimination on the silicon surface during etching process. The anodization of the silicon surface was performed under a constant current (galvanostat mode of the power supply), and process parameters, such as current density and etching time, were carefully tuned to minimize the surface reflectance of the heavily-doped wafer with sheet resistance between 20-30 / .

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Solid State Phenomena (Volumes 124-126)

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987-990

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.124-126.987

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Online since:

June 2007

Authors:

Jeong Kim, Sang Wook Park, In Sik Moon, Moon Jae Lee, Dae Won Kim

Keywords:

Antireflection Coating, Electrochemical Etching, Porous Silicon (PS), Solar Cell

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References

[1] K. Shirasawa, K. Fukui, K. Okada, Y. Inomata, H. Takahashi, Y. Fukawa and S. Fujii, in: Proceedings of the 14 th EPVSEC (Barcelona, Spain, 1997), p.384.

Google Scholar

[2] F. Duerncks, J. Szlufcik, A. Ziebakowski, J. Nijs and R. Mertens, in: Proceedings of the 14 th EPVSEC (Barcelona, Spain, 1997), p.792.

Google Scholar

[3] S. Strehlke, S. Bastide, J. Guillet and C. Levy-Clement: Mater. Sci. Eng. Vol. B69-70 (2000), p.81.

Google Scholar

[4] V.M. Aroutiounian, K.R. Maroutyan, A.L. Zaikyan and K.J. Touryan: Thin Solid Films Vol. 403-404 (2002), p.517.

DOI: 10.1016/s0040-6090(01)01650-9

Google Scholar

[5] V. Yerokhov, R. Hezel, M. Lipinski, H. Nagel, A. Mylyanych and P. Panek, in: Proceedings of the 17 th EPVSEC (Munich, Germany, 2001), p.335.

Google Scholar

[6] C. Pickering, M.I.J. Beale, D.J. Robbins, P.J. Pearson and R. Greef: Thin Solid Films Vol. 125 (1985), p.157.

DOI: 10.1016/0040-6090(85)90408-0

Google Scholar

[7] A.M. Goodman: Appl. Optics Vol. 17 (1978), p.2779.

Google Scholar

[8] B.L. Sopori and R.A. Pryor: Solar Cells Vol. 8 (1983), p.249.

Google Scholar