Effects of Se Atmosphere on the Densification of Absorber Layer Using Cu(In,Ga)Se2 Nanoparticles for Solar Cells

Abstract:

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To make a dense CIGS absorber layer, spray deposited CIGS films were annealed in the two-zone RTP furnace in Se atmosphere. More Se supply by increasing Se evaporation temperature or by increasing the flow rate of carrier gas resulted in the larger CIGS grains. However, a thick MoSe2 layer was formed between CIGS and Mo, as the Se supply increased, results in partial detachment of CIGS/MoSe2/Mo layers from the glass substrate. From the result, it was found that the short heat- treatment with high Se vapor pressure is better than the long heat-treatment with low Se vapor pressure. The large CIGS grains without peeling off, can be obtained from the following conditions; Se evaporation temperature of 450oC, substrate temperature of 550oC, annealing time of 5 min, and flow rate of carrier gas of 30 sccm.

Info:

Periodical:

Solid State Phenomena (Volumes 124-126)

Edited by:

Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park

Pages:

983-986

DOI:

10.4028/www.scientific.net/SSP.124-126.983

Citation:

K. H. Kim et al., "Effects of Se Atmosphere on the Densification of Absorber Layer Using Cu(In,Ga)Se2 Nanoparticles for Solar Cells", Solid State Phenomena, Vols. 124-126, pp. 983-986, 2007

Online since:

June 2007

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$35.00

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