Effects of Se Atmosphere on the Densification of Absorber Layer Using Cu(In,Ga)Se2 Nanoparticles for Solar Cells
To make a dense CIGS absorber layer, spray deposited CIGS films were annealed in the two-zone RTP furnace in Se atmosphere. More Se supply by increasing Se evaporation temperature or by increasing the flow rate of carrier gas resulted in the larger CIGS grains. However, a thick MoSe2 layer was formed between CIGS and Mo, as the Se supply increased, results in partial detachment of CIGS/MoSe2/Mo layers from the glass substrate. From the result, it was found that the short heat- treatment with high Se vapor pressure is better than the long heat-treatment with low Se vapor pressure. The large CIGS grains without peeling off, can be obtained from the following conditions; Se evaporation temperature of 450oC, substrate temperature of 550oC, annealing time of 5 min, and flow rate of carrier gas of 30 sccm.
Byung Tae Ahn, Hyeongtag Jeon, Bo Young Hur, Kibae Kim and Jong Wan Park
K. H. Kim et al., "Effects of Se Atmosphere on the Densification of Absorber Layer Using Cu(In,Ga)Se2 Nanoparticles for Solar Cells", Solid State Phenomena, Vols. 124-126, pp. 983-986, 2007