Effects of Se Atmosphere on the Densification of Absorber Layer Using Cu(In,Ga)Se₂ Nanoparticles for Solar Cells

Abstract:

To make a dense CIGS absorber layer, spray deposited CIGS films were annealed in the two-zone RTP furnace in Se atmosphere. More Se supply by increasing Se evaporation temperature or by increasing the flow rate of carrier gas resulted in the larger CIGS grains. However, a thick MoSe2 layer was formed between CIGS and Mo, as the Se supply increased, results in partial detachment of CIGS/MoSe2/Mo layers from the glass substrate. From the result, it was found that the short heat- treatment with high Se vapor pressure is better than the long heat-treatment with low Se vapor pressure. The large CIGS grains without peeling off, can be obtained from the following conditions; Se evaporation temperature of 450oC, substrate temperature of 550oC, annealing time of 5 min, and flow rate of carrier gas of 30 sccm.

• Periodical: Solid State Phenomena (Volumes 124-126)
• Pages: 983-986
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.124-126.983
• Online since: June 2007
• Authors: Ki Hyun Kim, Se Jin Ahn, Byung Tae Ahn, Kyung Hoon Yoon
• Keywords: Absorber Layer, Cu(InGa)Se₂, Densification, Nanoparticle, Se Atmosphere, Solar Cell

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