Interfacial Residual Stresses in Semiconductor Devices Measured on the Nano-Scale by Cathodoluminescence Piezospectroscopy

Giuseppe Pezzotti

doi:10.4028/www.scientific.net/SSP.127.123

Paper Titles

Hydrogen Permeation in V-Nb Alloys
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Transmission Electron Microscopy Observations on Cu-Mg Alloy Systems
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Oxidation Behavior of SiC/TiAl Composite Material
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Reaction of Sn to Nanocrystalline Surface Layer of Cu by Near Surface Severe Plastic Deformation
p.115

Interfacial Residual Stresses in Semiconductor Devices Measured on the Nano-Scale by Cathodoluminescence Piezospectroscopy
p.123

Direct Synthesis of Isolated L1₀-FePtCu Nanoparticles by RF-Magnetron Sputtering
p.129

TEM Studies on Phase Stability in Nanometer-Sized Alloy Particles
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Electron Dose Rate Dependence of Phase Separation Induced by Electronic Excitation in GaSb Nanoparticles
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Temperature Dependence of Internal Stress and Crystal Growth of Dilute Cu Alloy Films
p.147

HomeSolid State PhenomenaSolid State Phenomena Vol. 127Interfacial Residual Stresses in Semiconductor...

Interfacial Residual Stresses in Semiconductor Devices Measured on the Nano-Scale by Cathodoluminescence Piezospectroscopy

Abstract:

Electron-stimulated (cathodo)luminescence spectroscopy is quantitatively used for obtaining information about the residual stress fields piled up in semiconductor materials and devices during manufacturing. This additional micromechanical output can be added to the microscopic structural/chemical information available in the scanning electron microscope (SEM) by other conventional techniques. Independent of the physical mechanisms behind the luminescence emission, the spectral position of selected cathodoluminescence (CL) bands, observed in both crystalline and glassy materials, is shown to possess high stress sensitivity and thus suitability as a sensor for residual stress assessments. In this paper, we first quantitatively characterize the stress dependence of typical CL bands observed in ceramic and glassy semiconductor materials. Then, based on this knowledge, applications are shown of two-dimensional residual stress mapping on the nano-meter scale in electronic devices involving atomically sharp interfaces, according to an optimized automatic procedure performed into a field-emission gun (FEG-)SEM.

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Periodical:

Solid State Phenomena (Volume 127)

Pages:

123-128

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.127.123

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Online since:

September 2007

Authors:

Giuseppe Pezzotti

Keywords:

Cathodoluminescence, Piezospectroscopy, Probe Response Theory

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