Electrical Property of TiO2 Thin Film Deposited by RF Sputtering

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Abstract:

The authors investigated on the electrical property and the photo-catalytic activity of TiO2 thin films deposited in Ar+O2 atmosphere by RF magnetron sputtering. From the result of x-ray diffraction, the anatase phase was formed in TiO2 thin films. In TiO2 thin film deposited under a gas pressure of 3.0Pa, the contact angle of water showed 9 ゚, and the decomposition rate of Methylene Blue (measuring the absorbance of the reference light) showed -0.067 with UV light irradiation. Moreover, it revealed that the electric resistivity of TiO2 thin film deposited under the same conditions decreased from 8.0×103Ω・m to 1.4×10-2Ω・m with UV light irradiation.

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Periodical:

Solid State Phenomena (Volume 127)

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221-226

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September 2007

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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