Electrical Property of TiO2 Thin Film Deposited by RF Sputtering
The authors investigated on the electrical property and the photo-catalytic activity of TiO2 thin films deposited in Ar+O2 atmosphere by RF magnetron sputtering. From the result of x-ray diffraction, the anatase phase was formed in TiO2 thin films. In TiO2 thin film deposited under a gas pressure of 3.0Pa, the contact angle of water showed 9 ﾟ, and the decomposition rate of Methylene Blue (measuring the absorbance of the reference light) showed -0.067 with UV light irradiation. Moreover, it revealed that the electric resistivity of TiO2 thin film deposited under the same conditions decreased from 8.0×103Ω･m to 1.4×10-2Ω･m with UV light irradiation.
K. Niizuma et al., "Electrical Property of TiO2 Thin Film Deposited by RF Sputtering ", Solid State Phenomena, Vol. 127, pp. 221-226, 2007