Electrical Property of TiO2 Thin Film Deposited by RF Sputtering

Abstract:

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The authors investigated on the electrical property and the photo-catalytic activity of TiO2 thin films deposited in Ar+O2 atmosphere by RF magnetron sputtering. From the result of x-ray diffraction, the anatase phase was formed in TiO2 thin films. In TiO2 thin film deposited under a gas pressure of 3.0Pa, the contact angle of water showed 9 ゚, and the decomposition rate of Methylene Blue (measuring the absorbance of the reference light) showed -0.067 with UV light irradiation. Moreover, it revealed that the electric resistivity of TiO2 thin film deposited under the same conditions decreased from 8.0×103Ω・m to 1.4×10-2Ω・m with UV light irradiation.

Info:

Periodical:

Solid State Phenomena (Volume 127)

Edited by:

Masaaki Naka

Pages:

221-226

DOI:

10.4028/www.scientific.net/SSP.127.221

Citation:

K. Niizuma et al., "Electrical Property of TiO2 Thin Film Deposited by RF Sputtering ", Solid State Phenomena, Vol. 127, pp. 221-226, 2007

Online since:

September 2007

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Price:

$35.00

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