The Structure Studies on Si-N Thin Layers

Małgorzata Karolus; Eugeniusz Łągiewka

doi:10.4028/www.scientific.net/SSP.130.287

Paper Titles

SAXS Study of Selected Cationic Surfactant Influence on the DSPC-Based Model Phospholipid System
p.257

Temperature-Controlled Devitrification of Oxyfluoride Borate Glasses
p.263

X-Ray Diffraction Investigations of Crystallic Structure Changes in the Ni-Based Alloy at the Thermal Cycling
p.267

Structural Changes in New Rapidly-Quenched Finemet Type and Hitperm Type Alloys
p.273

Quantitative Phase Analysis of Fly Ashes from Six Polish Power Stations
p.277

Lattice and Peak Profile Parameters in GIXD Technique
p.281

The Structure Studies on Si-N Thin Layers
p.287

The Reflectometry Studies on SiC and SiN Thin Layers
p.293

Studies on Al₂O₃ - ZrO₂ Coatings Structure before and after Thermal Treatment
p.297

HomeSolid State PhenomenaSolid State Phenomena Vol. 130The Structure Studies on Si-N Thin Layers

The Structure Studies on Si-N Thin Layers

Abstract:

In structure studies performed using the Grazing Incident X-ray Diffraction Geometry (GIXD) for different incident angles it was indicated that the Si-N layers are non-homogenous and their structure depends on the penetration depth. The layers close to substrate (α = 2, 1°) show the presence of the Si3N4, SiO2, SiO2, SiC phases and an amorphous Si-N phase as well. The layers near the surface (α = 0.5; 0.25; 0.15°) are poorer in Si-N phases. There are only observed the presence of the Si3N4 and SiO2 phases. The obtained results confirm the non-homogenity of layers.