The Structure Studies on Si-N Thin Layers

Abstract:

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In structure studies performed using the Grazing Incident X-ray Diffraction Geometry (GIXD) for different incident angles it was indicated that the Si-N layers are non-homogenous and their structure depends on the penetration depth. The layers close to substrate (α = 2, 1°) show the presence of the Si3N4, SiO2, SiO2, SiC phases and an amorphous Si-N phase as well. The layers near the surface (α = 0.5; 0.25; 0.15°) are poorer in Si-N phases. There are only observed the presence of the Si3N4 and SiO2 phases. The obtained results confirm the non-homogenity of layers.

Info:

Periodical:

Solid State Phenomena (Volume 130)

Edited by:

Danuta Stróż & Małgorzata Karolus

Pages:

287-292

DOI:

10.4028/www.scientific.net/SSP.130.287

Citation:

M. Karolus and E. Łągiewka, "The Structure Studies on Si-N Thin Layers", Solid State Phenomena, Vol. 130, pp. 287-292, 2007

Online since:

December 2007

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$35.00

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