The Reflectometry Studies on SiC and SiN Thin Layers

Abstract:

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The X-ray reflectivity measurements were used for the analyses of the SiC and SiN thin layers. Density, roughness and the thickness were determined for searching materials. The calculations and simulations were carried out using the WinGixa software. The obtained results show that the studied layers are non-homogenous and there are consist of “sub-layers” rich in Si-C, Si-N, SI-O phases. Moreover, the presence of the main amorphous phase was observed in all searching samples.

Info:

Periodical:

Solid State Phenomena (Volume 130)

Edited by:

Danuta Stróż & Małgorzata Karolus

Pages:

293-296

DOI:

10.4028/www.scientific.net/SSP.130.293

Citation:

M. Karolus et al., "The Reflectometry Studies on SiC and SiN Thin Layers ", Solid State Phenomena, Vol. 130, pp. 293-296, 2007

Online since:

December 2007

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Price:

$35.00

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