A Comparative Analysis of Structural Defect Formation in Si⁺ Implanted and then Plasma Hydrogenated and in H⁺ Implanted Crystalline Silicon

Abstract:

Transmission electron microscopy (TEM) and scanning electron microscopy (SEM) have been used to compare hydrogen defects formed in p doped [001] oriented Cz silicon samples which are H+ plasma treated , H+ implanted or Si+ implanted + H+ plasma treated. Samples were studied as processed and after annealing at 250°C, 450°C and 600°C. It is found that 1 hour H+ plasma treatment at 250°C produces a low density of large defects (~100 nm) in prefered {111} plans close to the surface. H+ implantation at a dose of 3x1016 cm-2 produces high density of small (~ 20 nm) mostly {100} platelets that after 1 hour annealing at 450°C result in microcrack formation. Lower H+ implantation doses form very few microcracks at this temperature. Silicon implantation with a dose of 1015 cm2 followed by 1 hour H+ plasma treatment at 250°C and 1 hour annealing at 450°C produces similar microstructure and microcracks as the 3x1016 cm2 H+ implantation dose.

• Periodical: Solid State Phenomena (Volumes 131-133)
• Pages: 309-314
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.131-133.309
• Online since: October 2007
• Authors: Heidi Nordmark, Alexander G. Ulyashin, John Charles Walmsley, Randi Holmestad
• Keywords: Hydrogen Defects, Implantation, Scanning Electron Microscope (SEM), Silicon, TEM

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