Integrated Approach for Modeling of Heat Transfer and Microdefect Formation during CZ Silicon Single Crystal Growth

A.I. Prostomolotov; N.A. Verezub

doi:10.4028/www.scientific.net/SSP.131-133.283

Paper Titles

A Theoretical Study of Copper Contaminated Dislocations in Silicon
p.259

Theoretical Aspects on the Formation of the Tri-Interstitial Nitrogen Defect in Silicon
p.265

Effect of Hydrostatic Pressure on Self-Interstitial Diffusion in Si, Ge, Si<Ge> Crystals: Quantum-Chemical Simulations
p.271

Modeling of the Diffusion and Activation of Arsenic in Silicon Including Clustering and Precipitation
p.277

Integrated Approach for Modeling of Heat Transfer and Microdefect Formation during CZ Silicon Single Crystal Growth
p.283

Dislocations in Silicon as a Tool to Be Used in Optics, Electronics and Biology
p.289

Two Paths of Oxide Precipitate Nucleation in Silicon
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Engineering of Dislocation-Loops for Light Emission from Silicon Diodes
p.303

A Comparative Analysis of Structural Defect Formation in Si⁺ Implanted and then Plasma Hydrogenated and in H⁺ Implanted Crystalline Silicon
p.309

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Integrated Approach for Modeling of Heat Transfer and Microdefect Formation during CZ Silicon Single Crystal Growth

Abstract:

The features of microdefect formation during dislocation-free Si single crystals are considered in connection with the specific thermal CZ growing conditions. For this purpose the thermal crystal growth histories are calculated by means of a global thermal mathematical model and then on their basis the intrinsic point defect recombination and microdefect formation are modeled numerically. Difficulty of such integrated approach is explained by of the complicated and conjugated thermal modeling and a presence of various temperature zones in growing single crystal, answering to various defect formation mechanisms.