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HomeSolid State PhenomenaSolid State Phenomena Vols. 131-133A Theoretical Study of Copper Contaminated...

A Theoretical Study of Copper Contaminated Dislocations in Silicon

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Abstract:

Recently, the interaction of copper with dislocations in p-type Si/SiGe/Si structures has been investigated experimentally and a new dislocation related DLTS-level at Ev +0.32 eV was detected after intentional contamination with copper. To determine the origin of this newly detected level, in this work we present first density functional calculations of substitutional copper at 90◦ and 30◦ partial dislocations in silicon. Defect–dislocation binding energies are determined and electrical gap levels are calculated and compared with the experimental data. As a result, the observed level at Ev + 0.32 eV is tentatively assigned to the single acceptor level of substitutional copper at the dislocation.

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Gettering and Defect Engineering in Semiconductor Technology XII

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Solid State Phenomena (Volumes 131-133)

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259-264

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https://doi.org/10.4028/www.scientific.net/SSP.131-133.259

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Online since:

October 2007

Authors:

N. Fujita, R. Jones, Sven Öberg, Patrick R. Briddon, A.T. Blumenau

Keywords:

Copper (Cu), Dislocation, Silicon

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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