A Theoretical Study of Copper Contaminated Dislocations in Silicon

Abstract:

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Recently, the interaction of copper with dislocations in p-type Si/SiGe/Si structures has been investigated experimentally and a new dislocation related DLTS-level at Ev +0.32 eV was detected after intentional contamination with copper. To determine the origin of this newly detected level, in this work we present first density functional calculations of substitutional copper at 90◦ and 30◦ partial dislocations in silicon. Defect–dislocation binding energies are determined and electrical gap levels are calculated and compared with the experimental data. As a result, the observed level at Ev + 0.32 eV is tentatively assigned to the single acceptor level of substitutional copper at the dislocation.

Info:

Periodical:

Solid State Phenomena (Volumes 131-133)

Edited by:

A. Cavallini, H. Richter, M. Kittler and S. Pizzini

Pages:

259-264

DOI:

10.4028/www.scientific.net/SSP.131-133.259

Citation:

N. Fujita et al., "A Theoretical Study of Copper Contaminated Dislocations in Silicon", Solid State Phenomena, Vols. 131-133, pp. 259-264, 2008

Online since:

October 2007

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Price:

$35.00

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