Gettering and Defect Engineering in Semiconductor Technology XII
Paper Title Page
Abstract: A novel crystal growth method has been developed for the production of ingots, bricks and wafers for solar cells. Monocrystallinity is...
Abstract: The carrier recombination activities of small angle (SA) grain boundaries (GBs) in multicrystalline Si (mc-Si) were systematically...
Abstract: This paper investigates the impact of iron (Fe) and molybdenum (Mo) when they are introduced in the feedstock for mono- and...
Abstract: In present work temperature stable conductivity is considered for neutron-doped FZ silicon with point radiation defects. It was shown that...
Abstract: The knowledge and control of the structural and morphological properties of nanocrystalline silicon is a fundamental requisite for its...
Abstract: Epitaxial group-III nitride films, although in single crystalline form, contain still a large number of threading dislocations. These set...
Abstract: In this paper, the deep levels occurring in Fe- or Co-germanide Schottky barriers on ntype Ge have been studied by Deep Level Transient...