Gettering and Defect Engineering in Semiconductor Technology XII

Volumes 131-133

doi: 10.4028/www.scientific.net/SSP.131-133

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Authors: Oleg Kononchuk, Francois Boedt, Frederic Allibert

Abstract: High temperature anneal of SOI wafers in oxygen-free atmosphere results in internal buried oxide dissolution and top Si layer etching....

113
Authors: H. Ohyama, K. Takakura, T. Nagano, M. Hanada, S. Kuboyama, Eddy Simoen, Cor Claeys

Abstract: The degradation and recovery behavior of device performance on GaAlAs LEDs (Light emitting diodes) irradiated by 2-MeV electrons and 70-MeV...

119
Authors: Anthony R. Peaker, Vladimir P. Markevich, J. Slotte, K. Kuitunen, F. Tuomisto, A. Satta, Eddy Simoen, I. Capan, B. Pivac, R. Jačimović

Abstract: Fast neutron irradiation of germanium has been used to study vacancy reactions and vacancy clustering in germanium as a model system to...

125
Authors: Yurii M. Pokotilo, Alla N. Petukh, Valentin V. Litvinov, Vladimir P. Markevich, Nikolay V. Abrosimov, Anthony R. Peaker

Abstract: It is found that shallow hydrogen-related donors are formed in proton-implanted dilute Ge1-хSiх alloys (0 ≤ x ≤ 0.031) as well as in...

131
Authors: Ida E. Tyschenko, A.G. Cherkov, M. Voelskow, V.P. Popov

Abstract: The behavior of Sb and In atoms embedded into silicon-on-insulator structure (SOI) near the bonding interface was investigated as a...

137
Authors: Ida E. Tyschenko, A.G. Cherkov, M. Voelskow, V.P. Popov

Abstract: The properties of germanium implanted into the SiO2 layers in the vicinity of the bonding interface of silicon-on-insulator (SOI)...

143
Authors: Eugenijus Gaubas, Jan Vanhellemont

Abstract: Results are presented of a comparative study of carrier lifetime in silicon and germanium. The impact of surface quality and passivation,...

149
Authors: M.V. Trushin, O.F. Vyvenko, Michael Seibt

Abstract: Minority carrier diffusion lengths were measured for the set of n- and p-type silicon samples with NiSi2 precipitates of different...

155
Authors: Lukas Válek, Jan Šik, David Lysáček

Abstract: An unusual pattern of the Oxidation Induced Stacking Faults (OISF) in the heavily boron-doped silicon is reported. Instead of the commonly...

167

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