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HomeSolid State PhenomenaSolid State Phenomena Vols. 131-133Enhanced Oxygen Precipitation during the...

Enhanced Oxygen Precipitation during the Czochralski Crystal Growth

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Abstract:

An unusual pattern of the Oxidation Induced Stacking Faults (OISF) in the heavily boron-doped silicon is reported. Instead of the commonly reported simple OISF ring, we observe a banded OISF pattern. The pattern reflects the distribution of residual vacancies as it is described by Voronkov and Falster [J. Crystal Growth 204 (1999) 462]. We show that the oxygen precipitates in the L- and H- bands grow to an abnormally large size during the crystal growth and which serve as the OISF nuclei during subsequent wafer oxidation. It is concluded that a combination of the high boron, oxygen and vacancy concentration is responsible for the enhanced oxygen precipitation during the crystal growth.

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Gettering and Defect Engineering in Semiconductor Technology XII

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Solid State Phenomena (Volumes 131-133)

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167-174

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https://doi.org/10.4028/www.scientific.net/SSP.131-133.167

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Online since:

October 2007

Authors:

Lukas Válek, Jan Šik, David Lysáček

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Boron, Defect, Oxygen, Precipitation, Silicon

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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