Enhanced Oxygen Precipitation during the Czochralski Crystal Growth
An unusual pattern of the Oxidation Induced Stacking Faults (OISF) in the heavily boron-doped silicon is reported. Instead of the commonly reported simple OISF ring, we observe a banded OISF pattern. The pattern reflects the distribution of residual vacancies as it is described by Voronkov and Falster [J. Crystal Growth 204 (1999) 462]. We show that the oxygen precipitates in the L- and H- bands grow to an abnormally large size during the crystal growth and which serve as the OISF nuclei during subsequent wafer oxidation. It is concluded that a combination of the high boron, oxygen and vacancy concentration is responsible for the enhanced oxygen precipitation during the crystal growth.
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
L. Válek et al., "Enhanced Oxygen Precipitation during the Czochralski Crystal Growth", Solid State Phenomena, Vols. 131-133, pp. 167-174, 2008