SEM Investigation of Surface Defects Arising at the Formation of a Buried Nitrogen-Containing Layer in Silicon

Abstract:

The main goal of this work is to demonstrate the correlation between the density and type of surface defects arising during the formation of a buried nitrogen-containing layer in Si wafers, and the number of buried defects formed by different dose hydrogen preimplantation. Standard commercial 12 ⋅cm boron-doped and 4.5 ⋅cm phosphorous-doped Cz Si wafers were subjected to hydrogen ion implantation at room temperature with the energy 100 keV and doses 1⋅1015 - 4⋅1016 at/cm2. Then nitrogen was introduced into silicon from a DC plasma source at a temperature of 300 oС. Finally, all samples were subjected to 2 h vacuum annealing at 900 oС. The experiments have shown that the density and type of the surface defects depend significantly on the dose of hydrogen implantation, parameters of N+-plasma treatment, and conductivity type of silicon. Optimization of the above-mentioned parameters makes it possible to create the substrates containing a buried dielectric SixNy layer and having a practically defect-free surface.

• Periodical: Solid State Phenomena (Volumes 131-133)
• Pages: 195-200
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.131-133.195
• Online since: October 2007
• Authors: A.V. Frantskevich, Anis M. Saad, A.K. Fedotov, E.I. Rau, A.V. Mazanik, N.V. Frantskevich
• Keywords: Hydrogen, Nitrogen, Scanning Electron Microscope (SEM), Silicon

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