SEM Investigation of Surface Defects Arising at the Formation of a Buried Nitrogen-Containing Layer in Silicon

Abstract:

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The main goal of this work is to demonstrate the correlation between the density and type of surface defects arising during the formation of a buried nitrogen-containing layer in Si wafers, and the number of buried defects formed by different dose hydrogen preimplantation. Standard commercial 12 ⋅cm boron-doped and 4.5 ⋅cm phosphorous-doped Cz Si wafers were subjected to hydrogen ion implantation at room temperature with the energy 100 keV and doses 1⋅1015 - 4⋅1016 at/cm2. Then nitrogen was introduced into silicon from a DC plasma source at a temperature of 300 oС. Finally, all samples were subjected to 2 h vacuum annealing at 900 oС. The experiments have shown that the density and type of the surface defects depend significantly on the dose of hydrogen implantation, parameters of N+-plasma treatment, and conductivity type of silicon. Optimization of the above-mentioned parameters makes it possible to create the substrates containing a buried dielectric SixNy layer and having a practically defect-free surface.

Info:

Periodical:

Solid State Phenomena (Volumes 131-133)

Edited by:

A. Cavallini, H. Richter, M. Kittler and S. Pizzini

Pages:

195-200

DOI:

10.4028/www.scientific.net/SSP.131-133.195

Citation:

A.V. Frantskevich et al., "SEM Investigation of Surface Defects Arising at the Formation of a Buried Nitrogen-Containing Layer in Silicon", Solid State Phenomena, Vols. 131-133, pp. 195-200, 2008

Online since:

October 2007

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$35.00

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