Radiation Defects and Thermal Donors Introduced in Silicon by Hydrogen and Helium Implantation and Subsequent Annealing

Pavel Hazdra; Volodymyr V. Komarnitskyy

doi:10.4028/www.scientific.net/SSP.131-133.201

Paper Titles

Influence of the Dislocation Travel Distance on the DLTS Spectra of Dislocations in Cz-Si
p.175

Detection of Nickel in Silicon by Recombination Lifetime Measurements
p.183

Effect of Diffusion of I Group Metal (Ag) on Characteristics of Metal/Porous Silicon Sensors
p.189

SEM Investigation of Surface Defects Arising at the Formation of a Buried Nitrogen-Containing Layer in Silicon
p.195

Radiation Defects and Thermal Donors Introduced in Silicon by Hydrogen and Helium Implantation and Subsequent Annealing
p.201

Infrared Absorption from Low Carbon Concentration, Low Dose, Annealed CZ Silicon
p.207

Peculiarities of Dislocation Related D1/D2 Bands Behavior under Copper Contamination in Silicon
p.213

Multiplicity of Nitrogen Species in Silicon: The Impact on Vacancy Trapping
p.219

The Electrical and Optical Properties of Point and Extended Defects in Silicon Arising from Oxygen Precipitation
p.225

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Radiation Defects and Thermal Donors Introduced in Silicon by Hydrogen and Helium Implantation and Subsequent Annealing

Abstract:

The effect of high-energy hydrogen and helium implantation and subsequent annealing on generation of radiation defects and shallow donors in the low-doped oxygen-rich FZ n-type silicon was investigated. Samples were implanted with 7 MeV 4He2+ or 1.8 MeV 1H+ to fluences ranging from 1x109 to 3x1011 cm-2 and 1.4x1010 to 5x1012cm-2, resp., and then isochronally annealed for 30 minutes in the temperature range up to 550°C. Results show that radiation damage produced by helium ions remarkably enhances formation of thermal donors (TDs) when annealing temperature exceeds 375°C, i.e. when the majority of vacancy-related recombination centers anneals out. The excess concentration of TDs is proportional to the helium fluence and peaks at 1.6x1014cm-3 if annealing temperature reaches 475°C. Proton irradiation itself introduces hydrogen donors (HDs) which form a Gaussian peak at the proton end-of-range. Formation and annealing of shallow and deep hydrogen-related levels are strongly influenced by electric field at annealing temperatures below 175°C. If annealing temperature exceeds 350°C, HDs disappear and the excessive shallow doping is caused, as in the case of helium irradiation, by radiation enhanced TDs.