Infrared Absorption from Low Carbon Concentration, Low Dose, Annealed CZ Silicon

N. Inoue; Y. Goto; T. Sugiyama

doi:10.4028/www.scientific.net/SSP.131-133.207

Paper Titles

Detection of Nickel in Silicon by Recombination Lifetime Measurements
p.183

Effect of Diffusion of I Group Metal (Ag) on Characteristics of Metal/Porous Silicon Sensors
p.189

SEM Investigation of Surface Defects Arising at the Formation of a Buried Nitrogen-Containing Layer in Silicon
p.195

Radiation Defects and Thermal Donors Introduced in Silicon by Hydrogen and Helium Implantation and Subsequent Annealing
p.201

Infrared Absorption from Low Carbon Concentration, Low Dose, Annealed CZ Silicon
p.207

Peculiarities of Dislocation Related D1/D2 Bands Behavior under Copper Contamination in Silicon
p.213

Multiplicity of Nitrogen Species in Silicon: The Impact on Vacancy Trapping
p.219

The Electrical and Optical Properties of Point and Extended Defects in Silicon Arising from Oxygen Precipitation
p.225

Fundamental Interactions of Fe in Silicon: First-Principles Theory
p.233

HomeSolid State PhenomenaSolid State Phenomena Vols. 131-133Infrared Absorption from Low Carbon Concentration,...

Infrared Absorption from Low Carbon Concentration, Low Dose, Annealed CZ Silicon

Abstract:

Complexes formed by low dose irradiation with electron (1015-16/cm2) and He (5x1012- 5x1013/cm2) in the relatively low carbon concentration (1016/cm3) MCZ silicon were investigated by highly sensitive and quantitative IR absorption analysis. CiOi and VO were the main complexes in all cases. The concentration of these complexes was about 1015/cm3, or 10% of included carbon in the highest case. Loss of almost equal amount of Cs was observed. The concentration of CiOiI was one order of magnitude lower. Upon annealing, these lines weakened and almost disappeared at 400 oC. There were some absorption lines introduced by the annealing. VO2 was strongest among them and CsOi related structure was also confirmed. There were absorption lines at 954.9 and 962.6 cm-1 appeared after annealing at 300 oC.

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology XII

View Preview

Info:

Periodical:

Solid State Phenomena (Volumes 131-133)

Pages:

207-212

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.131-133.207

Citation:

Cite this paper

Online since:

October 2007

Authors:

N. Inoue, Y. Goto, T. Sugiyama

Keywords:

Carbon, Czochralski Silicon, Electron Irradiation, He, Infrared Absorption

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] R. Siemieniec, F. -J. Niedernostheide, H. -J. Schlzer, W. Sudkamp, U. Kellner-Werdehausen and J. Lutz, High Purity Silicon VII (Electrochem. Soc., Pennington, 2002) p.369.

Google Scholar

[2] N. Inoue, Y. Goto, T. Sugiyama, S. Yamazaki and T. Kushida, High Purity Silicon 9 (Electrochem. Soc., 2006) 313-320.

Google Scholar

[3] T. Sugiyama, S. Yamazaki, S. Nakagaki, M. Ishiko, Proc. 17 th Int. Symp. Power Semiconductor Devices & ICs, (Santa Barbara, 2004) p.243.

Google Scholar

[4] N. Inoue M. Nakatsu and V. D. Akhmetov, Silicon Materials Science and Technology X (Electrochem. Soc., Pennington, 2006) p.461.

Google Scholar

[5] L. I. Murin, V. P. Markevich, J. L. Lindstroem, M. Kleverman, J. Hermansson, T. Hallberg and B. G. Svensson, Solid State Phenomena, 82-84 (2002) 57.

DOI: 10.4028/www.scientific.net/ssp.82-84.57

Google Scholar

[6] L. I. Murin, J. L. Lindstroem, V. P. Markevich, I. F. Medvedeva, V. J. B. Torres, J. Coutinho, R. Jones and P. R. Briddon, Solid State Phenomena, 108-109 (2006) 223.

DOI: 10.4028/www.scientific.net/ssp.108-109.223

Google Scholar

[7] L. I. Murin, J. L. Lindstroem, B. G. Svensson, V. P. Markevich, A. R. Peaker and C. A. Londos, Solid State Phenomena, 108-109 (2006) 267.

DOI: 10.4028/www.scientific.net/ssp.108-109.267

Google Scholar

[8] C. A. Londos, G. D. Antonaras, M. S. Potsidi, A. Misiuk and V. V. Emtsev, Solid State Phenomena, 108-109 (2006) 205.

DOI: 10.4028/www.scientific.net/ssp.108-109.205

Google Scholar

[9] V. P. Markevich, L. I. Murin, S. B. Lastovskii, I. F. Medvedeva, J. L. Lindstroem, A. R. Peaker, J. Coutinho, R. Jones, V. J. B. Torres, S. Oeberg and P. R. Briddon, Solid State Phenomena, 108- 109 (2006) 273.

DOI: 10.4028/www.scientific.net/ssp.108-109.273

Google Scholar

[10] L. Khirunenko, Y. Pomozov, N. Tripachko, M. Sosnin, A. Duvanskii, L. I. Murin, J. L. Lindstroem, S. B. Lastovskii, L. F. Makarenko, V. P. Markevich and A. R. Peaker, Solid State Phenomena, 108-109 (2006) 261.

DOI: 10.4028/www.scientific.net/ssp.108-109.261

Google Scholar

[11] C. A. Londos, M. S. Potsidi, G. D. Antonaras and A. Andrianakis, Physica B 376-377(2006) 165.

DOI: 10.1016/j.physb.2005.12.044

Google Scholar

[12] L. J. Cheng, J. C. Corelli, J. W. Corbett and G. D. Watkins, Phys. Rev., 152 (1966) 761.

Google Scholar